NTMFS6H848NT1G

Single FETs, MOSFETs Overview

The NTMFS6H848NT1G is a single N-channel power MOSFET manufactured by onsemi. It utilizes Trench 8 technology to achieve low on-resistance and fast switching performance. The device features an 80 V drain-source voltage rating and supports a continuous drain current of up to 59 A at case temperature. Key electrical parameters include a maximum Rds(on) of 8.8 mΩ at 10 V gate drive. It is housed in an SO-8FL package designed for surface mount applications, offering high thermal efficiency.

Single FETs, MOSFETs Feature Summary

• Trench 8 technology enables low on-resistance and optimized switching characteristics.
• Single N-channel configuration with enhanced mode operation.
• SO-8FL package design provides efficient thermal dissipation capabilities.

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management systems
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix against official documentation, as variations like 'LT1G' or 'NT1G' may indicate specific tape-and-reel packaging or regional compliance differences. Confirm RoHS status and automotive qualification requirements if applicable to your design. Ensure the ordering part number matches the precise package and marking specifications required for your assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when an 80 V rating and low Rds(on) are required for high-current applications. The SO-8FL package is suitable for space-constrained designs needing robust thermal performance. Compare gate charge and input capacitance values against driver capabilities to ensure optimal switching speeds and minimize losses in your specific circuit topology.

Single FETs, MOSFETs Part Context

This part belongs to the NTMFS6H series from onsemi, which focuses on high-efficiency power switching solutions. The series leverages advanced trench gate technology to reduce conduction losses while maintaining reliable operation under varying thermal conditions. It serves as a key component in modern power electronics requiring compact form factors and high reliability.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for compatible parts within the same voltage and current ratings. Verify pinout compatibility and thermal resistance values before substitution. Ensure that any alternative device meets the same package dimensions and electrical specifications to maintain circuit integrity without redesigning the PCB layout.