ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
NTMT150N65S3HF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is POWER MOSFET, N-CHANNEL, SUPERFE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTMT150N65S3HF
- Description：POWER MOSFET, N-CHANNEL, SUPERFE
- Series：SuperFET® III, FRFET®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：5V @ 540µA
- Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1985 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：192W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-PQFN (8x8)
- Package / Case：4-PowerTSFN
Single FETs, MOSFETs datasheet and documents for NTMT150N65S3HF
Single FETs, MOSFETs Overview
The NTMT150N65S3HF is a single N-channel enhancement mode power MOSFET from onsemi, utilizing SuperFET III technology. It features a 650 V drain-source voltage rating and a maximum continuous drain current of 24 A. The device exhibits a typical on-resistance of 150 mOhms at 10 V gate drive. Packaged in a surface-mount PQFN format with four pins, it supports operation within an ambient temperature range of -55°C to +175°C. Key electrical characteristics include a gate charge of 43 nC and a maximum power dissipation of 192 W.
Single FETs, MOSFETs Feature Summary
- SuperFET III technology for optimized switching performance
- High-temperature operation capability up to 175°C junction temperature
- Surface-mount compatible PQFN package design
Single FETs, MOSFETs Applications
- Industrial motor drives
- Power supply circuits
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official documentation to confirm exact package dimensions and marking codes. Ensure compatibility with standard surface-mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated products.
Single FETs, MOSFETs Selection Notes
Select this component when high-voltage isolation and compact surface-mount packaging are required. The 150 mOhm on-resistance balances conduction losses with switching efficiency. Consider thermal management requirements given the 192 W dissipation rating and small footprint.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's SuperFET III family of power MOSFETs. It shares core technological attributes with other devices in the series but differs in package type and specific electrical ratings. The PQFN variant offers distinct mechanical advantages over through-hole alternatives.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include NTB150N65S3HF (TO-263 package) or NTP150N65S3HF (TO-220 package). Verify pinout compatibility and thermal resistance differences when replacing across package types.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
