Single FETs, MOSFETs NTMYS3D3N06CLTWG product image

NTMYS3D3N06CLTWG

$2.53
  • Description:MOSFET N-CH 60V 26A/133A LFPAK4
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:f10633669fff Category: Brand:

  
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NTMYS3D3N06CLTWG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 26A/133A LFPAK4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTMYS3D3N06CLTWG

  • Description:MOSFET N-CH 60V 26A/133A LFPAK4
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:26A (Ta), 133A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:40.7 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2880 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.9W (Ta), 100W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK4 (5x6)
  • Package / Case:SOT-1023, 4-LFPAK

Single FETs, MOSFETs datasheet and documents for NTMYS3D3N06CLTWG

NTMYS3D3N06CLTWG

Single FETs, MOSFETs Overview

The NTMYS3D3N06CLTWG is an N-channel Power MOSFET manufactured by onsemi, designed for high-efficiency power switching applications. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 26A at ambient temperature (Ta) or 133A at case temperature (Tc). The device utilizes the LFPAK4 (SOT-1023) surface-mount package, which provides low thermal resistance and robust mechanical stability. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 3mΩ, ensuring minimal conduction losses. It is qualified under AEC-Q101 standards, making it suitable for automotive environments, with an operating junction temperature range extending up to 175°C.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance design minimizes conduction losses for improved energy efficiency
  • LFPAK4 package offers enhanced thermal performance and compact footprint
  • Automotive-grade qualification ensures reliability in harsh operating conditions
  • High current capability supports demanding load switching requirements

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • DC-DC converter output stages
  • Motor control circuits
  • Load switch applications in industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TWG' confirms the tape-and-reel packaging format and lead-free compliance as per manufacturer specifications. Confirm AEC-Q101 qualification status if automotive application requires formal certification documentation. Ensure thermal management design accounts for the specified RthJA parameters in the final assembly layout.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile, high-current N-channel MOSFET is required for automotive or industrial DC switching. Compare Rds(on) and gate charge values against alternative packages to optimize drive circuit complexity. Verify that the LFPAK4 thermal dissipation capabilities meet the system's power loss constraints under worst-case operating temperatures.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's NVMYS series of automotive-grade MOSFETs. It is engineered for high-density power applications where space constraints and thermal efficiency are critical. The LFPAK4 package is part of a standardized family of surface-mount devices designed to replace larger through-hole or standard SMD packages in modern PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and thermal pad configuration when substituting with other LFPAK4 devices. Verify that alternative parts meet the same 60V rating and current handling capabilities. Ensure gate threshold voltage levels remain compatible with existing driver logic.

NTMYS3D3N06CLTWGNTMYS3D3N06CLTWG
$2.53
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