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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.7A 8TSSOP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.7A
- Rds On (Max) @ Id, Vgs：32mOhm @ 6.9A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 16V
- Power - Max：940mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The NTQD6866R2G is a dual N-channel MOSFET array manufactured by onsemi. It features a 20V drain-source voltage rating and supports a continuous drain current of 4.7A. The device is housed in an 8-TSSOP surface-mount package, with dimensions typically measuring approximately 3mm in length and 4.4mm in width. Designed for low-voltage applications, it integrates two independent channels within a single compact footprint to optimize board space.
Feature Summary
- Dual N-channel configuration for integrated switching control
- Low voltage operation suitable for portable electronics
- Compact surface-mount packaging for space-constrained designs
Applications
- Battery-powered consumer devices
- Portable electronic equipment
- Low-voltage signal switching circuits
Procurement Notes
Verify the specific manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the received components match the specified 8-TSSOP package type and electrical ratings. Check for any manufacturing date codes or lot markings that align with current production standards. Ensure compliance with relevant environmental regulations such as RoHS if required by the application. Validate supplier authorization status before purchase.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required for low-voltage environments. The 20V rating limits suitability to specific low-power applications. Consider the 8-TSSOP package constraints for thermal management and PCB layout. Evaluate the 4.7A current capability against the load requirements. Compare alternative packages if higher current density or different pin configurations are needed.
Part Context
This part belongs to the discrete semiconductor category, specifically within the FET and MOSFET arrays segment. It represents onsemi's offering for compact, dual-channel switching solutions. The device complements other low-voltage power management components in portable and industrial control systems requiring efficient space utilization.
Replacement Considerations
Consult official onsemi substitution guides for verified alternatives. Ensure replacement parts maintain identical voltage, current, and package specifications. Cross-reference pinouts and thermal characteristics to guarantee functional compatibility without redesigning the host circuit.
