NTQD6968NR2

Overview

The NTQD6968NR2 is a dual N-channel Power MOSFET manufactured by onsemi, designed for low-voltage switching applications. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 7.0 A. The device utilizes a common drain configuration within an 8-pin TSSOP surface-mount package. Key electrical characteristics include a maximum on-resistance optimized for efficiency and specific gate charge parameters to facilitate rapid switching transitions in power management circuits.

Feature Summary

• Dual N-channel architecture with common drain configuration
• Low on-resistance design for efficient power handling
• Surface-mount TSSOP-8 package for compact integration

Applications

• Power management integrated circuit output stages
• DC-DC converter synchronous rectification
• Load switching in portable electronic devices

Part Context

This component belongs to the NTQD series of dual MOSFETs from onsemi, which are engineered for high-density power applications. The NR2 suffix typically denotes a specific tape-and-reel packaging variant intended for automated surface-mount assembly processes, ensuring compatibility with standard pick-and-place manufacturing equipment.

Replacement Considerations

Verified direct substitutes include the NTQD6968N and NTQD6968. These variants share identical electrical specifications and pinout configurations, allowing for functional interchangeability in existing designs without requiring schematic modifications.