NTQD6968R2

NTQD6968R2

$0.37
  • Description:MOSFET 2N-CH 20V 6.6A 8TSSOP
  • Series:-

SKU:91b3795b8b5d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 6.6A 8TSSOP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:6.6A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 6.6A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:900pF @ 16V
  • Power - Max:1.42W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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NTQD6968R2

Overview

The NTQD6968R2 is a dual N-channel Power MOSFET from onsemi, packaged in an 8-pin TSSOP. It features a drain-to-source voltage (VDSS) of 20 Vdc and a continuous drain current (ID) of 6.6 Adc at 25°C ambient temperature. The device exhibits an ultra-low static drain-to-source on-state resistance (RDS(on)) of 22 mΩ at VGS = 4.5 Vdc and ID = 6.6 Adc. Operating within a junction temperature range of -55°C to +150°C, it incorporates logic level gate drive capability and a body-drain diode with high-speed soft recovery characteristics.

Feature Summary

  • Dual N-Channel Configuration
  • Ultra Low RDS(on)
  • Logic Level Gate Drive
  • Miniature Dual TSSOP–8 Surface Mount Package
  • Diode Exhibits High Speed, Soft Recovery

Applications

  • Power Management in Portable Products
  • Battery-Powered Products
  • Computers
  • Printers
  • PCMCIA Cards
  • Cellular and Cordless Telephones

Procurement Notes

Verify the specific ordering suffix 'R2' corresponds to the Tape & Reel shipping format containing 3000 units per reel. Confirm that the component marking includes the device code '968', year code 'Y', work week 'WW', and MOSFET identifier 'N'. Ensure the procurement documentation references publication number NTQD6968/D for accurate technical specifications.

Selection Notes

Select this component for applications requiring low conduction losses and efficient battery life extension in portable electronics. The dual channel design allows for compact board layouts using the miniature TSSOP-8 package. Verify that the 20 Vdc rating and 6.6 Adc current capacity align with the system's maximum operating conditions and thermal dissipation requirements.

Part Context

This part belongs to the Power MOSFET category manufactured by onsemi. It is specifically designed as a dual N-channel enhancement mode device intended for surface mount applications. The product line emphasizes efficiency and miniaturization for use in consumer electronics and portable computing devices.

Replacement Considerations

Compatible alternatives include the NTQD6968N and NTQD6968NR2. These variants share identical electrical characteristics but differ in packaging quantities or reel configurations. Verify pinout compatibility and package dimensions before substitution.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The maximum continuous drain current decreases to 4.5 Adc when the ambient temperature reaches 70°C.

What are the typical switching times for this device?

The turn-on delay time is typically 9.0 ns, rise time is 35 ns, turn-off delay time is 70 ns, and fall time is 70 ns under standard test conditions.

How does the reverse recovery time compare to other diodes?

The body-drain diode exhibits a fast reverse recovery time (trr) of typically 30 ns with a stored charge (QRR) of 0.017 μC, supporting high-speed switching applications.

NTQD6968R2NTQD6968R2
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