NTS2101PT1G

$0.30

Description：MOSFET P-CH 8V 1.4A SC70-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)

SKU:0837a8933808 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTS2101PT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 8V 1.4A SC70-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTS2101PT1G

Description：MOSFET P-CH 8V 1.4A SC70-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：8 V
Current - Continuous Drain (Id) @ 25°C：1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：100mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：640 pF @ 8 V
FET Feature：-
Power Dissipation (Max)：290mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SC-70-3 (SOT323)
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for NTS2101PT1G

NTS2101PT1G

Single FETs, MOSFETs Overview

The NTS2101PT1G is a single P-Channel enhancement mode MOSFET manufactured by onsemi. It features an 8V drain-source breakdown voltage and supports a continuous drain current of 1.4A. The device utilizes a trench-based gate architecture to achieve low gate charge, facilitating fast switching performance. It is housed in a compact SC-70 (SOT-323) surface-mount package with three terminals. The component operates within a junction temperature range of -55°C to +150°C and offers a maximum power dissipation of 329mW.

Single FETs, MOSFETs Feature Summary

Trench-based gate architecture for optimized switching speed
Low gate charge capability for efficient drive requirements
Enhancement mode operation for standard logic control

Single FETs, MOSFETs Applications

Battery protection circuits
Power management systems
Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and reel specifications. Ensure compatibility with the intended PCB footprint, as the SC-70 package dimensions are critical for assembly. Cross-reference thermal resistance values from the datasheet to validate heat dissipation capabilities under actual operating conditions before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage P-Channel solution is required for space-constrained designs. The SC-70 package provides a small form factor suitable for portable electronics. Evaluate the 1.4A current rating against peak load requirements and ensure the 8V voltage rating exceeds the maximum system supply voltage to prevent breakdown during normal operation.

Single FETs, MOSFETs Part Context

This part belongs to the NTS series of power MOSFETs from onsemi, which focuses on low-voltage, high-efficiency switching solutions. The series is designed to meet the demands of modern portable devices requiring minimal footprint and rapid response times. The NTS2101PT1G represents a specific variant within this lineup tailored for 8V applications.