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The NTSB30U100CTT4G is a dual Schottky rectifier manufactured by onsemi, featuring a common cathode configuration. It utilizes Ultra Fast Trench technology to achieve low forward voltage and high switching speed. The device is housed in a D2PAK (TO-263) surface-mount package with three terminals. Key electrical parameters include a maximum repetitive peak reverse voltage of 100V and an average forward current rating of 30A per diode. The component supports a maximum junction temperature of 175°C and offers low reverse leakage current characteristics suitable for high-efficiency power conversion applications.
Verify the specific suffix 'T4G' to confirm tape and reel packaging and lead-free compliance. Ensure the ordering part number matches the exact voltage and current ratings required for the target circuit design. Cross-reference the datasheet revision date to confirm technical specifications remain consistent with current production standards.
Select this component when a dual Schottky rectifier with a 100V blocking capability and 30A continuous current rating is required. The D2PAK package is suitable for applications needing robust thermal dissipation through the exposed tab. Consider the low forward voltage characteristic for improved efficiency in low-voltage, high-current output stages compared to standard PN junction rectifiers.
This device belongs to onsemi's NTSB series of ultra-fast trench Schottky rectifiers. The series is engineered to replace traditional silicon rectifiers in applications demanding higher efficiency and faster switching speeds. The common cathode arrangement integrates two independent diodes into a single compact package, reducing board space and simplifying assembly processes.
Direct replacements must match the 100V Vrrm, 30A If, and TO-263/D2PAK-3 package outline. Verify that substitute components maintain comparable forward voltage and reverse leakage specifications to ensure system performance parity.
The maximum operating junction temperature is 175°C.
It features a common cathode configuration.
It utilizes Ultra Fast Trench technology to achieve low forward voltage and high switching speed.