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The NTTD1P02R2 is a P-Channel Power MOSFET manufactured by onsemi. It features a drain-source voltage rating of 20 V and a continuous drain current capability of 10 A at room temperature. The device exhibits a maximum on-resistance (RDS(on)) of 2.2 mΩ, ensuring low conduction losses in power switching applications. Packaged in the compact DFN5x6 footprint, it offers thermal efficiency suitable for space-constrained designs. Key electrical parameters include a gate threshold voltage range and specific capacitance values defined in the official datasheet.
Verify the exact ordering suffix and tape-and-reel specifications against the manufacturer's latest documentation before procurement. Ensure that the component meets all relevant environmental compliance requirements for the target application. Cross-reference the part number with authorized distributors to confirm availability and authenticity.
Select this component when a 20 V P-Channel MOSFET with high current handling and low RDS(on) is required. Consider the DFN5x6 package size for board space constraints. Evaluate thermal performance based on the expected duty cycle and ambient operating conditions to ensure safe junction temperatures.
This part belongs to onsemi's portfolio of P-Channel Power MOSFETs designed for general-purpose power switching. It complements similar N-Channel devices in system designs requiring complementary logic levels or specific polarity configurations. The series emphasizes efficiency and reliability in modern electronic equipment.
Direct replacements must match the 20 V rating, 10 A current capacity, and 2.2 mΩ RDS(on). Verify pin compatibility and package dimensions (DFN5x6) to ensure mechanical fit. Check gate charge and threshold voltage specifications to maintain circuit timing and drive requirements.