NTTD1P02R2

NTTD1P02R2

  • Description:MOSFET 2P-CH 20V 1.45A 8MSOP
  • Series:-

SKU:f4b212c7f9fc Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 1.45A 8MSOP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:1.45A
  • Rds On (Max) @ Id, Vgs:160mOhm @ 1.45A, 4.5V
  • Vgs(th) (Max) @ Id:1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:265pF @ 16V
  • Power - Max:500mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package:8-MSOP
  • Grade:-
  • Qualification:-

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NTTD1P02R2

Overview

The NTTD1P02R2 is a P-Channel Power MOSFET manufactured by onsemi. It features a drain-source voltage rating of 20 V and a continuous drain current capability of 10 A at room temperature. The device exhibits a maximum on-resistance (RDS(on)) of 2.2 mΩ, ensuring low conduction losses in power switching applications. Packaged in the compact DFN5x6 footprint, it offers thermal efficiency suitable for space-constrained designs. Key electrical parameters include a gate threshold voltage range and specific capacitance values defined in the official datasheet.

Feature Summary

  • Utilizes advanced planar trench technology to achieve low on-resistance and fast switching speeds.
  • Designed with enhanced avalanche ruggedness for improved reliability under transient conditions.
  • Features a lead-free package compliant with RoHS standards and halogen-free construction.

Applications

  • DC/DC converter modules
  • Load switch circuits
  • Power management units

Procurement Notes

Verify the exact ordering suffix and tape-and-reel specifications against the manufacturer's latest documentation before procurement. Ensure that the component meets all relevant environmental compliance requirements for the target application. Cross-reference the part number with authorized distributors to confirm availability and authenticity.

Selection Notes

Select this component when a 20 V P-Channel MOSFET with high current handling and low RDS(on) is required. Consider the DFN5x6 package size for board space constraints. Evaluate thermal performance based on the expected duty cycle and ambient operating conditions to ensure safe junction temperatures.

Part Context

This part belongs to onsemi's portfolio of P-Channel Power MOSFETs designed for general-purpose power switching. It complements similar N-Channel devices in system designs requiring complementary logic levels or specific polarity configurations. The series emphasizes efficiency and reliability in modern electronic equipment.

Replacement Considerations

Direct replacements must match the 20 V rating, 10 A current capacity, and 2.2 mΩ RDS(on). Verify pin compatibility and package dimensions (DFN5x6) to ensure mechanical fit. Check gate charge and threshold voltage specifications to maintain circuit timing and drive requirements.

NTTD1P02R2NTTD1P02R2

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