NTTFD021N08C

$2.95

Description：MOSFET 2N-CH 80V 6A 12WQFN
Series：-

SKU:08fa49dfa490 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 80V 6A 12WQFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：80V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs：21mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id：4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs：8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：572pF @ 40V
Power - Max：1.7W (Ta), 26W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：12-PowerWQFN
Supplier Device Package：12-WQFN (3.3x3.3)
Grade：-
Qualification：-

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NTTFD021N08C

Overview

The onsemi NTTFD021N08C is a dual-packaged N-channel MOSFET designed for synchronous buck converters. It integrates control (Q2) and synchronous (Q1) transistors with an internal switch node connection to simplify PCB layout. The device features an 80V drain-source voltage rating and supports a continuous current of 24A. Key electrical parameters include a maximum on-resistance of 21mΩ at VGS=10V and ID=7.8A, and 55mΩ at VGS=6V and ID=3.9A. This configuration optimizes power efficiency while reducing thermal stress in high-density power applications.

Feature Summary

Dual-packaged design integrating control and synchronous MOSFETs with internal switch node connection
Low on-resistance characteristics to minimize conduction losses and improve power conversion efficiency
Low-inductance package construction to reduce switching losses and shorten rise/fall times

Applications

Server power modules
Computer motherboard power delivery
Communication equipment power systems
Industrial control load point applications

Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm pinout compatibility and thermal specifications. Ensure that the selected variant matches the required voltage and current ratings for the target synchronous buck converter topology. Confirm RoHS compliance status if environmental regulations apply to the final assembly.

Selection Notes

Select this component when board space constraints require integrated dual MOSFETs with pre-connected switch nodes. Evaluate the 21mΩ on-resistance against the system's thermal budget to ensure adequate heat dissipation without excessive heatsinking. Consider the low-inductance package benefits for high-frequency switching operations where minimizing electromagnetic interference is critical.

Part Context

This component belongs to onsemi's PowerTrench series of N-channel MOSFETs. It is part of a family of dual-packaged devices engineered specifically for synchronous rectification applications. The integration of two optimized transistors in a single footprint distinguishes it from discrete single MOSFET solutions by offering improved layout density and consistent switching performance.