NTTFD022N10C

FET, MOSFET Arrays Overview

The NTTFD022N10C is a dual N-channel MOSFET from onsemi, integrating two optimized transistors within a single package to facilitate synchronous buck converter designs. The device features an internal connection of the switching node, simplifying layout and reducing parasitic inductance. It offers a maximum drain-source breakdown voltage of 100V. At VGS=10V and ID=7.8A, the maximum RDS(on) is 25mΩ; at VGS=6V and ID=3.9A, it is 61mΩ. The component supports a continuous drain current of up to 40A and operates within a junction temperature range of -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with integrated switching node for simplified synchronous rectifier layouts
• Low on-resistance design minimizes conduction losses across various gate drive conditions
• Low-inductance package architecture reduces switching times and associated energy dissipation

FET, MOSFET Arrays Applications

• Synchronous step-down (buck) converters
• Point-of-load power management modules
• Computing system power distribution networks

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the selected variant matches the required voltage rating and current handling capabilities for the target application environment. Cross-reference the package dimensions with PCB footprint libraries prior to procurement.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-efficiency synchronous rectification stages requiring minimized board space and reduced parasitic inductance. Evaluate the thermal performance based on the specified RDS(on) values at expected operating currents. Confirm that the gate drive voltage aligns with the low RDS(on) specifications provided in the electrical characteristics table.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's PowerTrench family of trench-gate MOSFETs, engineered for high-frequency power conversion applications. The dual configuration addresses the common challenge of minimizing loop inductance in half-bridge topologies. It represents a specialized solution for optimizing power density and efficiency in modern DC-DC conversion systems.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 100V rating, dual N-channel topology, and SO-8FL package dimensions. Verify that substitute components offer comparable RDS(on) values at identical test conditions to maintain circuit efficiency and thermal performance.