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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 9A 12WQFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 38A (Tc)
- Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：13.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：948pF @ 30V
- Power - Max：1.7W (Ta), 26W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：12-PowerWQFN
- Supplier Device Package：12-WQFN (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The onsemi NTTFD9D0N06HLTWG is a dual N-channel MOSFET device housed in a WQFN12 (3x3 mm) package, designated as CASE 510CJ. It integrates two dedicated N-channel MOSFETs with internally connected switching nodes to facilitate synchronous buck converter layouts. The component features a maximum drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 38 A at a case temperature of 25°C. The maximum on-resistance (rDS(on)) is specified at 9.0 mΩ when VGS = 10 V and ID = 10 A, and 13 mΩ when VGS = 4.5 V and ID = 8.0 A. The device operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Dual integrated N-channel MOSFETs with internal connection of switching nodes for optimized synchronous buck converter design
- Low on-resistance characteristics to minimize conduction losses and enhance power efficiency
- Low-inductance package construction designed to reduce rise and fall times, thereby lowering switching losses
Applications
- Computer motherboard power modules
- Server power supplies
- Communication base station power systems
- General-purpose point-of-load applications
Procurement Notes
Verify the specific ordering suffix TWG to confirm the reel packaging configuration and RoHS compliance status. Ensure that the procurement documentation explicitly references the WQFN12 (CASE 510CJ) physical footprint to prevent integration errors during PCB assembly. Cross-reference the manufacturer's latest datasheet revision to validate thermal resistance parameters against current design requirements.
Selection Notes
Select this component for designs requiring a compact dual-MOSFET solution with low on-resistance for synchronous rectification. Evaluate the 9.0 mΩ rDS(on) specification at VGS = 10 V to ensure compatibility with standard gate drive voltages. Consider the 60 V breakdown voltage rating relative to input supply variations and transient spikes in the target application circuit.
Part Context
This device belongs to the PowerTrench family of silicon MOSFETs from onsemi. It is part of a series of dual N-channel devices engineered specifically for high-efficiency power conversion topologies. The integration of two matched transistors in a single low-profile package reduces board space compared to discrete implementations.
Replacement Considerations
Direct replacements must match the 60 V rating, dual N-channel topology, and WQFN12 footprint. Verify that alternative components offer comparable rDS(on) values at identical test conditions to maintain thermal performance.
