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NTTFS5116PLTAG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 5.7A 8WDFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTTFS5116PLTAG
- Description：MOSFET P-CH 60V 5.7A 8WDFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：52mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1258 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 40W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-WDFN (3.3x3.3)
- Package / Case：8-PowerWDFN
Single FETs, MOSFETs datasheet and documents for NTTFS5116PLTAG
Single FETs, MOSFETs Overview
The NTTFS5116PLTAG is a P-Channel Power MOSFET manufactured by onsemi, designed for surface-mount applications. It features a Drain-Source Voltage (Vds) of 60 V and a Continuous Drain Current (Id) of 5.7 A. The device exhibits a maximum Drain-Source On-State Resistance (Rds(on)) of 52 mΩ at 10 V gate drive. Key electrical parameters include a Gate Charge (Qg) of 25 nC at 10 V and an Input Capacitance (Ciss) of 1258 pF at 25 V. The component operates within a junction temperature range of -55°C to +175°C and is housed in an 8-WDFN package.
Single FETs, MOSFETs Feature Summary
- P-Channel enhancement mode construction optimized for low-side or high-side switching applications
- Low on-state resistance characteristic supporting efficient power management
- Automotive-grade reliability compliant with AEC-Q101 standards
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- DC-DC converter output stages
- Load switch circuits in electronic control units
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix TAG against official onsemi documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with AEC-Q101 automotive qualification requirements if deployed in vehicle electronics. Cross-reference the 8-WDFN footprint dimensions with PCB layout guidelines to prevent assembly errors. Confirm RoHS compliance status through current manufacturer declarations prior to integration.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V P-Channel MOSFET with moderate current handling is required. The 52 mΩ Rds(on) offers a balance between conduction loss and cost. Consider the 8-WDFN package constraints for thermal dissipation in compact designs. Validate that the 5.7 A continuous current rating meets the application's peak and steady-state demands without exceeding thermal limits.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's portfolio of discrete power semiconductors. It complements N-Channel variants in mixed-signal power stages. The WDFN form factor supports miniaturization trends in modern electronics. It serves as a replacement for legacy P-Channel devices requiring similar voltage and current ratings in industrial and automotive contexts.
Single FETs, MOSFETs Replacement Considerations
The NVTFS5116PLTWG is a documented alternative from onsemi with comparable 60 V P-Channel specifications. Verify pinout compatibility and thermal performance differences before substitution. Ensure the replacement maintains AEC-Q101 certification if automotive use is intended.
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