Single FETs, MOSFETs NTTS2P03R2G product image

NTTS2P03R2G

  • Description:MOSFET P-CH 30V 2.1A MICRO8
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:5db836bf6c1f Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

NTTS2P03R2G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 30V 2.1A MICRO8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTTS2P03R2G

  • Description:MOSFET P-CH 30V 2.1A MICRO8
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:85mOhm @ 2.48A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 24 V
  • FET Feature:-
  • Power Dissipation (Max):600mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-MSOP
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Single FETs, MOSFETs datasheet and documents for NTTS2P03R2G

NTTS2P03R2G

Single FETs, MOSFETs Overview

The NTTS2P03R2G is a P-channel MOSFET manufactured by onsemi, designed for surface-mount applications. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 2.1 A at 25°C. The device operates with a gate-source voltage (Vgs) range of ±20 V and exhibits a maximum gate charge (Qg) of 22 nC at 4.5 V. Its input capacitance (Ciss) is 500 pF at 24 V. The component is housed in an 8-MSOP package and supports junction temperatures from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • P-channel MOSFET technology for power switching
  • Surface-mount construction in an 8-MSOP package
  • High accuracy threshold characteristics

Single FETs, MOSFETs Applications

  • Power management circuits
  • Battery protection systems
  • Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' against official documentation, as primary records indicate the base part number NTTS2P03R2 without this suffix. Confirm RoHS compliance status, as existing data suggests non-compliance for the base variant. Check product lifecycle status carefully, as the component may be discontinued or subject to change notices.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage P-channel switching requirements within a 30 V limit. Ensure the 8-MSOP package fits the PCB layout constraints. Verify thermal dissipation capabilities given the 600 mW power rating. Cross-reference electrical parameters with system requirements for gate drive voltages and current handling.

Single FETs, MOSFETs Part Context

This device belongs to the discrete semiconductor category, specifically single FETs under the MOSFET classification. It is part of onsemi's portfolio of metal-oxide-semiconductor field-effect transistors intended for general-purpose switching and amplification tasks in electronic circuits.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult manufacturer databases for direct replacements.

NTTS2P03R2GNTTS2P03R2G

Click on the inquiry