NTUD3127CT5G

Overview

The NTUD3127CT5G is a dual N-channel MOSFET array manufactured by onsemi, housed in an SOT-963 surface-mount package. It features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 220 mA at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.5 ohms when measured at a gate-source voltage (Vgs) of 4.5 V with a drain current of 100 mA. The gate threshold voltage (Vgs(th)) is specified as a maximum of 1 V at a drain current of 100 µA. Input capacitance (Ciss) is limited to 12.5 pF at a drain-source voltage of 15 V. The component supports a junction temperature range from -55°C to 150°C and has a maximum power dissipation rating of 125 mW.

Feature Summary

• Dual N-channel configuration within a compact SOT-963 footprint
• Low input capacitance suitable for high-speed switching applications
• Extended operating temperature range for harsh environments

Applications

• Portable consumer electronics requiring low-power switching
• Battery-operated devices with space constraints
• Signal routing and protection circuits in mobile platforms

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape-and-reel specifications. Ensure that the requested part number matches the precise electrical characteristics required for the target design, as minor suffix variations may indicate differences in packaging or testing criteria rather than functional changes.

Selection Notes

Select this component for designs prioritizing minimal board space over high-current handling capabilities. The 20 V rating and 220 mA current limit define its operational boundaries. Designers must account for the 1.5 ohm on-resistance when calculating conduction losses, as it is relatively high compared to modern power MOSFETs. Verify thermal management requirements given the 125 mW power dissipation limit in the small SOT-963 package.

Part Context

This device belongs to onsemi's portfolio of discrete semiconductor products, specifically categorized under FET and MOSFET arrays. It serves as a complementary solution to single-channel MOSFETs where dual functionality is needed in a reduced footprint. The SOT-963 package allows for automated surface-mount assembly, integrating into broader system designs alongside other low-voltage logic and power components.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the 20 V Vdss rating, dual N-channel topology, and compatible SOT-963 or equivalent pin-compatible package. Verify that the alternative device meets or exceeds the 1.5 ohm Rds(on) specification at the intended operating conditions.