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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.16A SOT963
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：160mA
- Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：9pF @ 15V
- Power - Max：125mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-963
- Supplier Device Package：SOT-963
- Grade：-
- Qualification：-
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Overview
The NTUD3128NT5G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes the PowerTrench technology and is housed in an SOT-963 package with dimensions of 1.0 mm x 1.0 mm. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 220 mA at 25°C. The maximum on-resistance (Rds(on)) is specified as 1.5 Ohms at a gate-source voltage (Vgs) of 4.5 V. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 125 mW.
Feature Summary
- Dual N-channel configuration integrated into a single ultra-small footprint for space-constrained designs.
- Optimized for portable electronics requiring low vertical clearance and high-density board assembly.
- Enhancement mode operation suitable for low-voltage switching applications.
Applications
- Portable consumer electronics
- Space-limited circuit boards
- Low-voltage signal switching
Procurement Notes
Verify the exact part number spelling, as the provided model contains a potential typographical error compared to standard manufacturer listings. Confirm the suffix 'NT5G' against official datasheets to ensure correct packaging and tape-and-reel specifications. Cross-reference the component with the NTUD312x series documentation for accurate ordering details.
Selection Notes
Select this component when a dual N-channel MOSFET is required in an extremely compact SOT-963 package. Ensure the application voltage does not exceed the 20 V limit and that the thermal management can handle the 125 mW dissipation rating. Verify compatibility with automated assembly processes due to the small form factor.
Part Context
This component belongs to the NTUD312x series of dual MOSFETs designed specifically for ultra-small SOT-963 packages. The series targets portable devices where board space is limited. It serves as a compact alternative to discrete single-channel solutions, integrating two N-channel transistors into one 1.0 mm x 1.0 mm footprint.
Replacement Considerations
Check for direct substitutes within the NTUD312x family or other dual N-channel MOSFETs in SOT-963 packages. Verify pinout compatibility and electrical parameters such as Rds(on) and Vds before substitution.
