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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.22A SOT963
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：220mA
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：12.5pF @ 15V
- Power - Max：125mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-963
- Supplier Device Package：SOT-963
- Grade：-
- Qualification：-
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Overview
The NTUD3170NZT5G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes Trench technology and is housed in an SOT-963-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and supports a continuous drain current (Id) of 220 mA. The maximum drain-source on-resistance (Rds(on)) is specified at 1.5 Ohms. Gate-source voltage limits range from -8 V to +8 V, with a threshold voltage (Vgs(th)) of 400 mV. Power dissipation is rated at 125 mW, and the operating temperature spans from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for compact circuit integration
- Trench technology construction for enhanced performance
- Surface-mount design suitable for automated assembly
Applications
- Low-voltage signal switching applications
- Battery-powered portable devices
- General-purpose logic level interfacing
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Ensure storage conditions maintain integrity prior to soldering. Validate part markings against datasheet specifications to prevent counterfeit introduction into supply chains.
Selection Notes
Select this component for low-power dual-switching requirements within a 20 V system. The SOT-963 package offers space efficiency for dense layouts. Consider the 1.5 Ohm on-resistance when calculating power loss at 220 mA loads. Verify gate drive compatibility with the 400 mV threshold voltage for reliable operation.
Part Context
This part belongs to the NTUD3170NZ series of dual N-channel MOSFETs. It shares the same electrical characteristics as the NTUD3170NZ but includes specific tape-and-reel packaging suffixes for manufacturing automation. The series targets cost-sensitive consumer electronics requiring small form factors.
Replacement Considerations
Direct substitutes include the NTUD3170NZ variant. Cross-reference pinouts and thermal resistance values before substitution. Verify that alternative packages maintain compatible footprint dimensions for existing PCB designs.
