NTZD3152PT1G

$0.41

Description：MOSFET 2P-CH 20V 0.43A SOT563
Series：-

SKU:f6dddbcbe9d7 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 0.43A SOT563
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：430mA
Rds On (Max) @ Id, Vgs：900mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：175pF @ 16V
Power - Max：250mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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NTZD3152PT1G

Overview

The NTZD3152PT1G is a dual P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of -430 mA. The device incorporates an integrated ESD protection structure within its SOT-563-6 surface-mount package. Key electrical parameters include a gate-source breakdown voltage of ±6.0 V, a threshold voltage of 1 V, and a maximum DC power dissipation of 280 mW. The component operates across a temperature range from -55 °C to +150 °C junction temperature.

Feature Summary

Dual P-channel configuration for compact circuit integration
Integrated electrostatic discharge (ESD) protection structure
Surface-mount design in a small footprint package

Applications

Portable electronic devices requiring low-voltage switching
Battery-powered equipment with space constraints
General-purpose signal switching applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure that the requested part number matches the exact electrical ratings required for the target application. Cross-reference the manufacturer's latest datasheet revision to confirm compliance with current environmental standards and material declarations before finalizing procurement orders.

Selection Notes

Select this component when a dual P-channel MOSFET with integrated ESD protection is required in a minimal footprint. The 20 V rating suits low-voltage logic interfaces. Verify that the 430 mA current limit meets the load requirements. Compare input capacitance and switching speeds against system timing constraints to ensure adequate performance for the intended frequency range.

Part Context

This component belongs to the NTZD series of dual MOSFETs designed for portable electronics. It shares the SOT-563 package form factor with other small-signal transistors in the lineup. The series emphasizes space-saving designs while providing essential protection features for sensitive downstream components in mobile and handheld device architectures.