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The NTZD3152PT5G is a dual P-channel power MOSFET manufactured by onsemi, housed in a compact SOT-563 surface-mount package. It features a drain-source voltage rating of -20V and a continuous drain current capability of -430mA. The device incorporates an integrated gate resistor for each channel to optimize switching performance and minimize electromagnetic interference. Key electrical parameters include a maximum on-resistance (Rds(on)) of 0.9 ohms at Vgs = -4.5V, a threshold voltage range of 0.5V to 1V, and a total power dissipation of 280mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix 'PT5G' against official onsemi documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the required voltage and current ratings for the target circuit design. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement orders.
Select this component when a dual P-channel solution is required in a minimal footprint. Compare Rds(on) values at the intended operating gate voltage to ensure efficiency meets system requirements. Verify that the thermal dissipation capabilities align with the expected load currents and ambient temperature conditions of the application.
This part belongs to onsemi's portfolio of small-signal and power MOSFETs designed for portable electronics. The SOT-563 package is commonly used in mobile phones, tablets, and other handheld devices where space optimization is critical. It serves as a complementary switch in power distribution networks alongside N-channel counterparts.
Check for direct pin-compatible alternatives from onsemi or other manufacturers offering identical -20V, dual P-channel specifications in SOT-563 packages. Verify that any substitute maintains the same gate resistance integration and thermal characteristics to ensure circuit compatibility without redesign.