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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.54A SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：540mA, 430mA
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 16V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The NTZD3155CT1H is a small signal MOSFET from onsemi, featuring complementary N-channel and P-channel enhancement mode transistors in an SOT-563 package. It provides a drain-to-source voltage of 20 V with continuous drain currents of 540 mA for the N-channel and -430 mA for the P-channel at 25°C. The device incorporates leading trench technology to achieve low RDS(on) values of 0.4 Ω (N-channel) and 0.5 Ω (P-channel) at VGS = ±4.5 V. It includes ESD protection on the gate and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N/P-channel configuration with integrated ESD protection
- Low on-resistance utilizing leading trench technology
- Compact SOT-563 surface-mount footprint
Applications
- DC-DC conversion circuits
- Load and power switching with level shift
- Single or dual cell Li-ion battery operated systems
- High speed circuits
- Cell phones, MP3s, digital cameras, and PDAs
Procurement Notes
Verify the ordering suffix 'T1H' against official documentation to confirm tape and reel specifications, including part orientation and tape dimensions. Ensure compliance with RoHS standards and confirm Pb-free status as specified by the manufacturer. Cross-reference the specific package marking diagram to validate component authenticity upon receipt.
Selection Notes
Select this component for applications requiring a compact complementary MOSFET pair with low threshold voltage and high efficiency. Evaluate thermal resistance ratings and maximum power dissipation limits relative to the intended PCB copper area. Confirm that the required gate drive voltage aligns with the specified RDS(on) performance curves for optimal system efficiency.
Part Context
This component belongs to the NTZD3155C series of small signal MOSFETs manufactured by onsemi. The series offers complementary N/P-channel configurations designed for portable electronics and power management applications. Variants within the series may differ in packaging quantities or reel specifications while maintaining identical electrical characteristics.
Replacement Considerations
Compatible substitutes include NTZD3155CT2G and NTZD3155CT5G, which share the same electrical specifications but differ in tape and reel packaging quantities.
