NVBG160N120SC1

Single FETs, MOSFETs Overview

The NVBG160N120SC1 is a single N-channel Silicon Carbide (SiC) MOSFET from onsemi's EliteSiC series. It features a D2PAK-7L surface-mount package and offers a drain-source breakdown voltage of 1200V with a maximum on-resistance of 160 mΩ at 25°C. The device supports continuous drain currents up to 19.5A and operates within a junction temperature range of -40°C to +175°C. Designed for high-efficiency power conversion, it utilizes advanced epitaxial layer technology to optimize switching performance and thermal management in demanding industrial applications.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon carbide material science for superior thermal conductivity and high-temperature operation capabilities compared to traditional silicon devices.
• Features an optimized epitaxial layer structure that minimizes on-state resistance while maintaining robust blocking voltage integrity.
• Incorporates a seven-lead D2PAK package design to enhance electrical connectivity and facilitate efficient heat dissipation through the exposed pad.

Single FETs, MOSFETs Applications

• Uninterruptible Power Supply (UPS) systems requiring high efficiency and reliability
• Industrial motor drives and inverters for precise speed control
• High-frequency DC-DC converters in renewable energy infrastructure

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and revision level against the official manufacturer datasheet to ensure compatibility with your design requirements. Confirm that the component meets all relevant environmental compliance standards, such as RoHS and REACH, before finalizing procurement. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that demand low conduction losses and fast switching speeds at 1200V levels. Evaluate the thermal resistance characteristics of the D2PAK-7L package to ensure adequate heatsinking solutions are implemented. Consider the gate charge specifications to determine appropriate driver capabilities for optimal switching performance.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's EliteSiC portfolio, which focuses on high-performance power semiconductors. The NVBG160N120SC1 represents a specific configuration within the broader family of SiC MOSFETs, distinguished by its 160 mΩ on-resistance and surface-mount packaging format suitable for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include other 1200V SiC MOSFETs in similar packages, such as the NTBG160N120SC1 or NVBG080N120SC1, provided pinout compatibility and electrical parameters align with the original design constraints. Always verify thermal and switching characteristics before substitution.