NVBLS1D7N08H

Single FETs, MOSFETs Overview

The NVBLS1D7N08H is an N-channel power MOSFET manufactured by onsemi, designed for surface-mount applications. It features an H-PSOF package with eight pins and a maximum drain-source voltage (Vds) of 80 V. The device supports a continuous drain current (Id) of 241.3 A and exhibits a maximum drain-source resistance (Rds) of 1.7 mΩ. Key electrical parameters include a typical gate charge (Qg) of 121 nC at the specified gate-source voltage, a maximum gate-source voltage (Vgs) of 20 V, and a forward voltage (Vf) of 1.2 V. Thermal performance is characterized by a maximum power dissipation (Pd) of 237.5 W, operating within a temperature range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• High-current capability with low on-resistance for efficient power handling
• Compact surface-mount packaging suitable for automated assembly
• Robust thermal operation across extended industrial temperature ranges

Single FETs, MOSFETs Applications

• Power distribution systems requiring high current switching
• DC-DC converter circuits in industrial equipment
• Motor control applications utilizing N-channel topology

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with onsemi or authorized distributors to ensure compatibility with your design requirements. Confirm that the H-PSOF package dimensions and pinout align with your PCB footprint specifications. Check for any recent updates regarding automotive qualification status or material compliance declarations before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that demand high continuous current handling alongside low conduction losses at 80 V ratings. Consider the thermal management capabilities provided by the H-PSOF package and the 237.5 W power dissipation rating. Ensure gate drive voltages remain within the 20 V limit to protect the oxide layer while leveraging the 121 nC gate charge for switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's portfolio of N-channel power MOSFETs, specifically engineered for high-efficiency power switching. The NVBLS series utilizes advanced trench technology to achieve low Rds(on) values. The H-PSOF package provides a balance between thermal performance and board space efficiency, making it suitable for dense power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference guides for direct replacements. Verify that any substitute maintains the 80 V Vds, 241.3 A Id, and 1.7 mΩ Rds(on) specifications. Ensure the replacement package matches the H-PSOF form factor and pin configuration to avoid PCB redesign.