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NVD360N65S3T4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is SF3 EASY AUTO 360MOHM DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NVD360N65S3T4G
- Description：SF3 EASY AUTO 360MOHM DPAK
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs：16.8 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：756 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for NVD360N65S3T4G
Single FETs, MOSFETs Overview
The NVD360N65S3T4G is a single N-channel power MOSFET from the SUPERFET III series by onsemi. It features a maximum drain-source voltage of 650 V and a continuous drain current of 10 A at 25°C. The device exhibits a typical on-resistance of 360 mΩ and a gate charge of approximately 17.5 nC. Packaged in a surface-mount TO-252 (DPAK) housing, it supports operation up to a junction temperature of 175°C with a power dissipation rating of 83 W.
Single FETs, MOSFETs Feature Summary
- Integrated body diode for efficient freewheeling applications
- Optimized gate charge characteristics for reduced switching losses
- Enhanced avalanche ruggedness for robust circuit protection
Single FETs, MOSFETs Applications
- High-frequency DC-DC converters
- Power factor correction circuits
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including suffixes against official manufacturer documentation to ensure correct package and tape-and-reel specifications. Confirm RoHS compliance status and specific thermal ratings required for your application design before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when designing high-voltage power stages requiring low conduction losses and fast switching speeds. Ensure the PCB layout accommodates the TO-252 package dimensions and provides adequate thermal relief for the drain pad to maintain safe operating temperatures under load.
Single FETs, MOSFETs Part Context
This device belongs to the SUPERFET III family, which utilizes advanced trench technology to achieve superior performance compared to previous generations. The series is designed for general-purpose power switching applications where efficiency and reliability are critical requirements.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for compatible parts within the same SUPERFET III lineup that match the 650V rating and TO-252 package. Verify pinout compatibility and electrical parameters such as Rds(on) and Qg before substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
