NVD4810NT4G-TB01

Single FETs, MOSFETs Overview

The NVD4810NT4G-TB01 is an obsolete single N-channel Power MOSFET manufactured by onsemi. It features a 30V drain-to-source voltage rating and supports continuous currents of 9A at case temperature and 54A at 25°C. The device exhibits a maximum on-resistance of 10mΩ. Key electrical parameters include a maximum input capacitance of 1350pF at 12V and a gate charge of 21nC at 11.5V. It is housed in a DPAK-3 (TO-252-3) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Dual N-channel architecture optimized for high-voltage operation with low gate resistance for fast switching capabilities.
• Designed to withstand fast switching and high-current stresses typical in power management applications.

Single FETs, MOSFETs Applications

• High-side and low-side switching in DC-DC converter circuits.
• Power distribution systems requiring robust current handling.
• Motor control interfaces utilizing N-channel logic-level drivers.

Single FETs, MOSFETs Procurement Notes

This component is officially listed as obsolete by the manufacturer. Verification of availability requires direct contact with authorized distributors or onsemi sales representatives. Confirm end-of-life status and potential discontinuance notifications before initiating any procurement processes, as standard supply channels may no longer support this specific part number.

Single FETs, MOSFETs Selection Notes

Engineers should evaluate alternative components from the same family or newer generations due to the obsolete status of this part. Consider devices with comparable 30V ratings and similar Rds(on) specifications that are currently in active production. Ensure replacement options maintain compatibility with existing thermal management and PCB footprint constraints.

Single FETs, MOSFETs Part Context

The NVD4810NT4G belongs to onsemi's NTD4810N series of single N-channel MOSFETs. These devices utilize silicon technology and are packaged in the DPAK-3 form factor. The series is characterized by low on-resistance and high current capability, targeting efficient power switching solutions in compact electronic designs.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, engineers must identify equivalent parts based on specific electrical requirements and mechanical fit rather than relying on official cross-reference lists.