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NVD5484NLT4G-VF01 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 10.7A/54A DPAK. Review the specifications below when checking this part for your BOM.
The NVD5484NLT4G-VF01 is an N-channel Power MOSFET manufactured by onsemi. It utilizes a DPAK-3 (TO-252-3) surface-mount package designed for high-efficiency switching applications. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 54 A at case temperature, with a reduced rating of 10.7 A at ambient temperature. Key electrical characteristics include a maximum on-resistance of 0.017 Ω and an avalanche energy capability of 125 mJ. The component is constructed using metal-oxide semiconductor technology and includes a built-in diode.
Verify the specific suffix VF01 against official manufacturer documentation to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure that the ordering information matches the exact electrical ratings and thermal performance data provided in the latest datasheet before finalizing procurement orders.
Select this component for applications requiring a balance between high current capacity and low conduction losses in a standard DPAK footprint. Consider the thermal derating curves when designing heat dissipation strategies, as the continuous current rating varies significantly between ambient and case temperature operating conditions.
This part belongs to the NVD series of N-channel MOSFETs from onsemi, which are optimized for automotive and industrial power management. The series emphasizes low Rds(on) and high reliability, often meeting automotive qualification standards such as AEC-Q101 for harsh environment operation.
Cross-reference with other 60V N-channel MOSFETs in the TO-252 package having comparable Rds(on) and Id ratings. Verify pinout compatibility and thermal resistance values to ensure direct substitution without redesigning the PCB layout or heatsinking.
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