Single FETs, MOSFETs NVD5484NLT4G-VF01 product image

NVD5484NLT4G-VF01

  • Description:MOSFET N-CH 60V 10.7A/54A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:8b9ca521e08b Category: Brand:

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NVD5484NLT4G-VF01 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 10.7A/54A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVD5484NLT4G-VF01

  • Description:MOSFET N-CH 60V 10.7A/54A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:10.7A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:17mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1410 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.9W (Ta), 100W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK-3
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for NVD5484NLT4G-VF01

NVD5484NLT4G-VF01

Single FETs, MOSFETs Overview

The NVD5484NLT4G-VF01 is an N-channel Power MOSFET manufactured by onsemi. It utilizes a DPAK-3 (TO-252-3) surface-mount package designed for high-efficiency switching applications. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 54 A at case temperature, with a reduced rating of 10.7 A at ambient temperature. Key electrical characteristics include a maximum on-resistance of 0.017 Ω and an avalanche energy capability of 125 mJ. The component is constructed using metal-oxide semiconductor technology and includes a built-in diode.

Single FETs, MOSFETs Feature Summary

  • High current handling capability with low on-state resistance for efficient power conversion
  • Robust avalanche energy rating ensuring reliability under transient load conditions
  • Integrated body diode simplifies circuit design for half-bridge and synchronous rectifier topologies

Single FETs, MOSFETs Applications

  • Automotive CAN-BUS common mode filtering systems
  • General-purpose power switching circuits
  • Synchronous rectification in DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix VF01 against official manufacturer documentation to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure that the ordering information matches the exact electrical ratings and thermal performance data provided in the latest datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a balance between high current capacity and low conduction losses in a standard DPAK footprint. Consider the thermal derating curves when designing heat dissipation strategies, as the continuous current rating varies significantly between ambient and case temperature operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the NVD series of N-channel MOSFETs from onsemi, which are optimized for automotive and industrial power management. The series emphasizes low Rds(on) and high reliability, often meeting automotive qualification standards such as AEC-Q101 for harsh environment operation.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 60V N-channel MOSFETs in the TO-252 package having comparable Rds(on) and Id ratings. Verify pinout compatibility and thermal resistance values to ensure direct substitution without redesigning the PCB layout or heatsinking.

NVD5484NLT4G-VF01NVD5484NLT4G-VF01

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