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NVD5865NLT4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 10A/46A DPAK. Review the specifications below when checking this part for your BOM.
The NVD5865NLT4G is a single N-channel Power MOSFET from onsemi, housed in a DPAK (CASE 369AA) package. It features a drain-to-source voltage of 60 V and a continuous drain current of 46 A at 25°C case temperature. The device exhibits a low on-resistance of 16 mΩ at 10 V gate drive and 19 A drain current. It is qualified to AEC-Q101 standards for automotive applications and supports an avalanche energy rating of 36 mJ.
Verify the complete part number including the T4G suffix to ensure correct tape and reel packaging configuration. Confirm that the specific ordering information matches the required shipping quantity and package style. Cross-reference the datasheet revision date to ensure all electrical characteristics align with the manufacturing batch specifications.
Select this component when a 60 V rated N-channel MOSFET is required for high-current switching applications. Ensure the thermal management design accommodates the junction-to-case resistance of 2.1 °C/W. Verify that the gate drive voltage meets the threshold requirements for optimal on-resistance performance under expected load conditions.
This device belongs to onsemi's NVD series of power MOSFETs, optimized for automotive and industrial power switching. The DPAK package provides a balance of thermal dissipation and board space efficiency. It is part of a family of components designed to meet stringent automotive quality and reliability standards.
Direct replacements must match the 60 V, 46 A, and DPAK specifications. Verify pinout compatibility and thermal resistance values. Check if alternative parts offer lower RDS(on) or improved switching speeds while maintaining AEC-Q101 qualification.
The maximum pulsed drain current is 203 A for a pulse width of 10 µs.
Yes, the NVD5865NLT4G is AEC-Q101 qualified.
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