Single FETs, MOSFETs NVD5865NLT4G product image

NVD5865NLT4G

$0.65
  • Description:MOSFET N-CH 60V 10A/46A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:f5e02e8946c6 Category: Brand:

  
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NVD5865NLT4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 10A/46A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVD5865NLT4G

  • Description:MOSFET N-CH 60V 10A/46A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Ta), 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:16mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta), 71W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for NVD5865NLT4G

NVD5865NLT4G

Single FETs, MOSFETs Overview

The NVD5865NLT4G is a single N-channel Power MOSFET from onsemi, housed in a DPAK (CASE 369AA) package. It features a drain-to-source voltage of 60 V and a continuous drain current of 46 A at 25°C case temperature. The device exhibits a low on-resistance of 16 mΩ at 10 V gate drive and 19 A drain current. It is qualified to AEC-Q101 standards for automotive applications and supports an avalanche energy rating of 36 mJ.

Single FETs, MOSFETs Feature Summary

  • Low RDS(on) designed to minimize conduction losses
  • High current capability with specified avalanche energy
  • AEC-Q101 qualified for automotive reliability

Single FETs, MOSFETs Applications

  • Motor drivers
  • Pump drivers for automotive braking systems
  • Steering control systems

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the T4G suffix to ensure correct tape and reel packaging configuration. Confirm that the specific ordering information matches the required shipping quantity and package style. Cross-reference the datasheet revision date to ensure all electrical characteristics align with the manufacturing batch specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V rated N-channel MOSFET is required for high-current switching applications. Ensure the thermal management design accommodates the junction-to-case resistance of 2.1 °C/W. Verify that the gate drive voltage meets the threshold requirements for optimal on-resistance performance under expected load conditions.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's NVD series of power MOSFETs, optimized for automotive and industrial power switching. The DPAK package provides a balance of thermal dissipation and board space efficiency. It is part of a family of components designed to meet stringent automotive quality and reliability standards.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 60 V, 46 A, and DPAK specifications. Verify pinout compatibility and thermal resistance values. Check if alternative parts offer lower RDS(on) or improved switching speeds while maintaining AEC-Q101 qualification.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 203 A for a pulse width of 10 µs.

Is the device suitable for automotive applications?

Yes, the NVD5865NLT4G is AEC-Q101 qualified.

NVD5865NLT4GNVD5865NLT4G
$0.65
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