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Product Detailed Parameters
- Description：VE-TRAC DUAL GEN II - DUAL SIDE
- Series：VE-Trac™
- Mfr：onsemi
- Package：Bulk
- IGBT Type：Field Stop
- Configuration：Half Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：1.45V @ 15V, 400A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：15-PowerDIP Module (2.441", 62.00mm)
- Supplier Device Package：AHPM15-CEA
- Voltage - Collector Emitter Breakdown (Max)：750 V
- Current - Collector (Ic) (Max)：500 A
- Power - Max：-
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：36000 pF @ 30 V
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Overview
The NVG500A75L4DSC2 is a dual-side cooling power module from onsemi's VE-Trac series, designed for high-power industrial and automotive applications. It integrates four 750V enhancement-mode Gallium Nitride (GaN) HEMTs in a half-bridge configuration with an integrated driver. The module features low on-resistance and fast switching characteristics typical of GaN technology, enabling high-frequency operation and improved efficiency in DC-DC converters and motor drives.
Feature Summary
- Dual-side cooling architecture for enhanced thermal management
- Integrated gate driver for simplified control interface
- High-voltage GaN HEMT technology for efficient power conversion
Applications
- Isolated bidirectional DC-DC converters
- Three-phase AC motor drives
- On-board chargers (OBC)
- DC fast charging stations
Procurement Notes
Verify the specific suffix '2' against official datasheets to confirm pinout or thermal pad variations. Ensure compatibility with recommended driving voltages and thermal interface materials. Check for AEC-Q101 qualification if used in automotive contexts. Confirm package dimensions match PCB footprint requirements.
Selection Notes
Select this module for applications requiring high power density and efficiency above 90%. Consider the integrated driver's voltage levels and propagation delays. Evaluate thermal resistance values against system heat sink capabilities. Compare total gate charge and output capacitance for switching loss calculations.
Part Context
This component belongs to onsemi's VE-Trac family of wide-bandgap power modules. It complements discrete GaN devices by offering pre-integrated drivers and optimized parasitic reduction. The series targets next-generation power electronics demanding compact form factors and reduced bill of materials.
Replacement Considerations
Direct replacements are limited due to proprietary integration. Evaluate equivalent half-bridge GaN modules from other manufacturers with similar voltage ratings and current capacities. Verify mechanical mounting holes and electrical pinouts before substitution.
