NVG800A75L4DSC2

Overview

The NVG800A75L4DSC2 is an automotive-grade half-bridge power module from the VE-Trac/C0116 Dual Gen II family, designed for hybrid and electric vehicle traction inverters. It integrates two narrow mesa Field Stop (FS4) IGBTs with a complementary diode in a compact AHPM15-CEA package. The device supports a continuous collector current of 550 A at 175°C junction temperature and withstands up to 800 A pulsed current. Key electrical ratings include a 750 V blocking voltage, 4.2 kV isolated DBC substrate, and low-stray inductance of 8 nH. Integrated chip-level temperature and current sensors facilitate precise thermal management and overcurrent protection.

Feature Summary

• Dual-side cooling architecture with integrated chip-level temperature and current sensing capabilities
• Automotive grade qualification compliant with AEC standards and PPAP capable
• Narrow mesa Field Stop (FS4) IGBT technology providing high current density and robust short-circuit protection
• Low stray inductance design ensuring efficient switching performance

Applications

• Hybrid and Electric Vehicle Traction Inverter
• High Power DC-DC Converter

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details and shipping configurations. Ensure compatibility with liquid cooling heatsink reference designs when integrating into inverter systems. Confirm that all mechanical mounting parameters align with the designated module case outline specifications prior to assembly.

Selection Notes

Select this component for applications requiring high current density and robust short-circuit withstand capability in EV traction environments. Evaluate thermal resistance values relative to the intended fluid flow rate and coolant mixture. Consider the integrated sensor outputs for implementing advanced overcurrent and overtemperature protection strategies within the control loop.

Part Context

This module belongs to the VE-Trac/C0116 Dual Gen II series, which utilizes advanced narrow mesa IGBT technology. The family is engineered specifically for compact footprints and dual-side cooling requirements typical in modern electric drive units. It represents a generation of power modules optimized for high blocking voltages and improved switching characteristics.

Replacement Considerations

Consult official onsemi documentation for confirmed substitute part numbers. Verify pinout compatibility and thermal interface requirements before substituting any alternative components.

FAQ

What is the maximum continuous operating junction temperature?

The maximum continuous operating junction temperature (Tvj max) is 175°C.

How does the module provide overcurrent protection?

It features an integrated chip-level current sense output that enables faster and simpler implementation of overcurrent protection (OCP).

What is the isolation voltage rating of the substrate?

The module utilizes a 4.2 kV isolated DBC (Direct Bonded Copper) substrate.