NVH050N65S3F

Single FETs, MOSFETs Overview

The NVH050N65S3F is an N-channel enhancement-mode power MOSFET from onsemi’s SUPERFET III family, utilizing charge balance super-junction technology. It features a 650 V drain-source voltage rating and a maximum continuous drain current of 58 A at 25°C. The device offers a typical RDS(on) of 50 mΩ and a typical gate charge of 125 nC. Packaged in TO-247-3 for through-hole mounting, it supports junction temperatures up to 150°C with a power dissipation of 378 W.

Single FETs, MOSFETs Feature Summary

• SUPERFET III charge balance technology minimizes conduction loss while providing superior switching performance and high dv/dt capability.
• Optimized body diode reverse recovery characteristics reduce the need for external components and improve system reliability.
• 100% avalanche tested to ensure robustness under extreme transient conditions.
• AEC-Q101 qualified with PPAP capability for demanding automotive applications.

Single FETs, MOSFETs Applications

• Automotive On-Board Chargers (HEV-EV)
• Automotive DC/DC Converters (HEV-EV)

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets to confirm exact electrical tolerances and package variations. Confirm RoHS compliance status and check for recent obsolescence notices. Ensure thermal management design accounts for the specified power dissipation limits at operating temperatures.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power conversion where low switching losses are critical. The combination of low gate charge and optimized output capacitance makes it suitable for high-frequency operation. Evaluate thermal resistance requirements based on the TO-247-3 package constraints.

Single FETs, MOSFETs Part Context

This part belongs to the SUPERFET III series, representing onsemi's advanced high-voltage super-junction MOSFETs. The series focuses on balancing low on-resistance with minimal gate charge to enhance overall system efficiency in compact power designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include NVH040N65S3F (lower RDS(on)) or NVH082N65S3F (higher RDS(on)). Verify pinout compatibility and thermal characteristics before substitution.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The NVH050N65S3F has a maximum drain-source voltage (VDSS) rating of 650 V.

Is this component qualified for automotive use?

Yes, the NVH050N65S3F is AEC-Q101 qualified and capable of PPAP, making it suitable for automotive applications.