NVJD4152PT1G

Overview

The NVJD4152PT1G is a dual P-channel trench small signal MOSFET with ESD protection, manufactured by onsemi. It operates within a drain-to-source voltage range of -20 V and supports a continuous drain current of -0.88 A at 25 °C. The device features an SC-88 package (CASE 419B-02) with dimensions of 2.00 x 1.25 x 0.90 mm. Electrical characteristics include a maximum RDS(on) of 600 mΩ at VGS = -1.8 V and a total gate charge of 2.2 nC. It is qualified under AEC-Q101 standards and is PPAP capable.

Feature Summary

• Utilizes leading trench technology for low on-resistance performance
• Features an ESD protected gate structure
• NV prefix indicates automotive qualification and unique site control change requirements

Applications

• Load and power management circuits
• Charging circuits
• Load switching applications in mobile phones, computing devices, digital cameras, MP3 players, and PDAs

Procurement Notes

Verify the specific ordering suffix 'T1G' to confirm tape and reel packaging quantities. Confirm that the NV prefix aligns with project requirements for AEC-Q101 qualification and PPAP capability. Ensure the SC-88 package style matches the PCB footprint design. Validate component authenticity through authorized distribution channels.

Selection Notes

Select this component for space-constrained designs requiring dual P-channel isolation in an SC-88 package. Consider the -20 V rating and 0.88 A current limit for low-power switching tasks. Evaluate thermal resistance ratings against expected ambient temperatures. Compare gate charge values against driver capabilities for optimal switching speed.

Part Context

This part belongs to the NTJD4152P family of dual P-channel MOSFETs. The NV prefix specifically denotes compliance with automotive quality standards and unique manufacturing site controls. It serves as a compact solution for portable electronics and automotive load switching where board space is limited.

Replacement Considerations

NTJD4152PT1G