NVLJD4007NZTAG

Overview

The NVLJD4007NZTAG is a dual N-channel MOSFET from onsemi, housed in a compact 2x2 mm WDFN package. It operates with a 30 V drain-source voltage and supports a continuous drain current of 245 mA. The device integrates gate ESD protection for enhanced reliability. Key electrical characteristics include a low on-resistance of 245 mΩ at 10 V gate drive. It is designed for applications requiring efficient power switching in small form factors.

Feature Summary

• Dual N-channel configuration within a single compact package
• Integrated gate electrostatic discharge (ESD) protection
• Low on-resistance for efficient power switching
• Suitable for space-constrained portable designs

Applications

• Battery-powered portable electronics
• Load switching in mobile devices
• Power management circuits in consumer gadgets

Procurement Notes

Verify the exact ordering part number against the manufacturer's official documentation to ensure compatibility with your specific design requirements. Confirm package type and marking codes directly with the supplier or authorized distributor before placing orders to avoid discrepancies.

Selection Notes

Select this component when a dual N-channel solution is required in a minimal footprint. Ensure the application voltage does not exceed 30 V and that the thermal constraints of the WDFN package are managed appropriately for the expected current load.

Part Context

This part belongs to onsemi's portfolio of small signal MOSFETs designed for high-density PCB layouts. The NVLJD series offers a balance of performance and size, targeting modern electronics where board space is limited but reliable switching is critical.

Replacement Considerations

Check for direct substitutes such as the NVLJD4007NZ without the TAG suffix if packaging differences are acceptable. Verify pinout compatibility and electrical parameters against alternative dual N-channel MOSFETs in similar packages.