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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 7A 6WDFNW
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 25A (Tc)
- Rds On (Max) @ Id, Vgs：23mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：440pF @ 25V
- Power - Max：2W (Ta), 24W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-WDFNW (2.2x2.3)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVLJWD023N04CLTAG is a dual N-channel power MOSFET from onsemi, rated for a drain-to-source voltage of 40 V. It features a maximum continuous drain current of 25 A at TC = 25°C and a low on-resistance of 23 mΩ at VGS = 10 V. The device operates within a junction temperature range of -55 to +175°C and utilizes a WDFNW6 (2.2x2.3 mm) surface-mount package. Key electrical parameters include a gate threshold voltage of 1.2 to 2.0 V, total gate charge of 9 nC at VGS = 10 V, and a junction-to-case thermal resistance of 6.3 °C/W.
Feature Summary
- Dual configuration in a compact footprint suitable for space-constrained designs
- Low RDS(on) minimizes conduction losses for improved efficiency
- Low QG and capacitance reduce driver losses during switching
- Wettable flank option enables enhanced optical inspection for quality control
Applications
- Automotive electronics requiring AEC-Q101 qualification
- Compact power supply modules
- Motor drive circuits
Procurement Notes
Verify the specific ordering suffix TAG, which indicates lead availability for wettable flanks and tape-and-reel packaging containing 3000 units. Confirm that the WDFNW6 package dimensions align with the target PCB layout. Ensure compliance with RoHS standards and Pb-free manufacturing requirements before finalizing procurement specifications.
Selection Notes
Select this component when a dual N-channel topology is required in a minimal footprint. Evaluate the 23 mΩ on-resistance against system conduction loss targets. Consider the 40 V breakdown voltage and 25 A current rating relative to peak load conditions. Verify that the WDFNW6 package fits within the available board area and thermal management constraints.
Part Context
This part belongs to onsemi's NVLJWS series of automotive-grade MOSFETs. It shares design characteristics with other devices in the family, such as the NVLJWD013N04CL, but offers distinct electrical ratings tailored for specific power density applications. The dual-channel architecture allows for independent control of two switches within a single package.
Replacement Considerations
Direct substitutes within the same series include the NVLJWD013N04CL. Verify pinout compatibility and ensure that the replacement device meets or exceeds the required 40 V breakdown voltage and current handling capabilities for the specific application.
