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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 5.5A 6WDFNW
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs：38mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：340pF @ 25V
- Power - Max：2.2W (Ta), 24W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-WDFNW (2.2x2.3)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVLJWD040N06CLTAG is a dual N-channel power MOSFET from onsemi, rated for a drain-to-source voltage of 60 V. It features a maximum continuous drain current of 18 A at 25°C case temperature and a low on-resistance of 38 mΩ at 10 V gate drive. The device utilizes the WDFNW6 (2.2x2.3 mm) surface-mount package with wettable flanks to facilitate optical inspection. Designed for high efficiency, it exhibits low total gate charge and capacitance values to minimize driver losses during switching operations.
Feature Summary
- Dual N-Channel Configuration
- Wettable Flanks for Enhanced Inspection
- AEC-Q101 Qualified and PPAP Capable
Applications
- Automotive Power Management Systems
- Compact DC-DC Converters
- Low-Side Switching Applications
Procurement Notes
Verify the specific ordering suffix TAG indicates tape and reel packaging containing 3000 units per reel. Confirm that the component marking displays the code 040N to ensure correct part identification. Ensure compliance with RoHS standards and lead-free manufacturing requirements specified in the datasheet before finalizing procurement specifications.
Selection Notes
Select this component when space constraints require a small footprint alongside high current handling capabilities. Evaluate thermal resistance parameters against the specific PCB copper pad area and ambient conditions. Consider the low gate charge characteristics for applications requiring fast switching speeds and minimal driver power consumption.
Part Context
This dual MOSFET belongs to onsemi's CoolMOS family, engineered for automotive reliability and compact design. It integrates two independent channels within a single WDFNW6 package to save board space. The device meets stringent automotive qualification standards, making it suitable for demanding environments where size and performance are critical factors.
Replacement Considerations
Direct substitutes must match the 60 V rating, 18 A current capacity, and WDFNW6 package dimensions. Verify equivalent RDS(on) values and thermal characteristics to maintain circuit performance. Check for identical wettable flank availability if automated optical inspection is required.
