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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6A 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：32mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：950pF @ 24V
- Power - Max：1.29W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMD6N03R2G is a dual N-channel MOSFET manufactured by onsemi, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 6 A. The device exhibits a maximum on-resistance (Rds(on)) of 32 mΩ at a gate-source voltage (Vgs) of 10 V. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 2 W. The component is automotive qualified under the AEC-Q100 standard.
Feature Summary
- Dual configuration with two independent N-channel elements integrated into a single compact package.
- Automotive-grade reliability certified to AEC-Q100 standards for enhanced durability.
- Low on-resistance design optimized for efficient power switching applications.
Applications
- Automotive electronic systems requiring robust switching capabilities
- General-purpose low-side switching circuits
- Power management modules in vehicle electronics
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the AEC-Q100 qualification status aligns with project requirements before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel configuration is required in an SOIC-8 footprint. Ensure the application voltage does not exceed the 30 V limit and that thermal management supports the 2 W power dissipation rating within the specified operating temperature range.
Part Context
This part belongs to the NVMD series of dual MOSFETs from onsemi. It shares the SOIC-8 form factor with other devices in the family but is distinguished by its 30 V rating and 6 A current capacity. It serves as a discrete solution for multi-channel switching needs.
Replacement Considerations
Direct substitutes include NVMD4N03R2G and NTMD6N03R2G. Verify pin compatibility and electrical parameters such as Rds(on) and Id ratings before implementing any cross-reference replacement.
