NVMD6N04R2G

Overview

The NVMD6N04R2G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a SOIC-8 surface-mount package and utilizes silicon technology. The device has a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 5.3 A. The maximum drain-source on-resistance (Rds(on)) is specified at 40 mΩ. The gate-source voltage range is -12 V to +12 V, with a typical gate charge (Qg) of 12 nC. Operating temperatures range from -55 °C to +150 °C, with a power dissipation rating of 2 W.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact package for space-constrained designs.
• Low on-resistance characteristics optimized for efficient power switching and reduced conduction losses.
• Enhanced mode operation providing reliable control through standard logic-level gate drive signals.

Applications

• DC-DC converter circuits requiring low-side or high-side switching capabilities.
• Load switching applications in portable electronic devices.
• Power management modules in automotive infotainment systems.

Procurement Notes

Verify the specific suffix 'R2G' against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS directives if environmental compliance is required for the target assembly. Cross-reference the datasheet revision date to validate thermal resistance values and absolute maximum ratings prior to finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel topology is necessary within an SOIC-8 footprint. Compare the 40 mΩ Rds(on) against system efficiency requirements at the intended operating current. Verify that the 40 V voltage rating provides sufficient headroom for the application's supply voltage. Consider the 2 W power dissipation limit and ensure adequate PCB copper area for thermal management during continuous operation.

Part Context

This part belongs to the NVMD series of dual N-channel MOSFETs from onsemi. It shares the SOIC-8 package form factor with variants like NVMD4N03R2G but offers higher voltage and current ratings. The series is designed for general-purpose switching applications where board space is limited compared to discrete single-transistor solutions.

Replacement Considerations

NVMD4N03R2G: Lower voltage rating (30 V). NTMD6N02R2G: Lower voltage rating (20 V). Verify pinout compatibility and thermal performance before substitution.