NVMFD016N06CT1G

Overview

The onsemi NVMFD016N06CT1G is a dual N-channel power MOSFET housed in a DFN8 5x6 mm (SO8FL) package. It features a maximum drain-to-source voltage of 60 V and a low on-resistance of 16.3 mΩ at 10 V gate drive. The device supports a continuous drain current of 32 A at 25°C case temperature and handles pulsed currents up to 128 A. Key electrical parameters include a total gate charge of 6.9 nC, input capacitance of 489 pF, and a forward diode voltage of 1.2 V. Thermal resistance from junction to case is 4.1°C/W, enabling efficient heat dissipation in compact designs.

Feature Summary

• Compact 5x6 mm footprint designed for space-constrained applications
• Low on-resistance minimizes conduction losses during operation
• Reduced gate charge and capacitance lower driver power consumption
• AEC-Q101 qualified with PPAP capability for automotive reliability

Applications

• Power tools and battery-operated vacuums
• UAVs, drones, and material handling equipment
• Battery management systems and storage solutions
• Home automation devices

Procurement Notes

Verify the specific ordering suffix T1G corresponds to tape and reel packaging containing 1500 units per reel. Confirm that the wettable flank option requires the NVMFWD016N06CT1G variant if enhanced optical inspection is necessary. Ensure compliance with Pb-free, Halogen-free, and RoHS standards as specified in the datasheet documentation.

Selection Notes

Select this component when a dual N-channel configuration is required within a 5x6 mm envelope. The 16.3 mΩ on-resistance suits high-efficiency switching applications. Verify thermal constraints against the 4.1°C/W junction-to-case rating. Consider the NVMFWD016N06CT1G variant if automated optical inspection capabilities are critical for the manufacturing process.

Part Context

This part belongs to the NVMFD016N06C family of dual N-channel MOSFETs manufactured by onsemi. It utilizes the SO8FL-Dual package format, also known as DFN8 5x6. The standard version is designated NVMFD016N06CT1G, while the wettable flank variant is NVMFWD016N06CT1G. Both share identical electrical characteristics but differ in physical terminal construction for inspection purposes.

Replacement Considerations

Direct substitutes within the same series include the NVMFWD016N06CT1G, which offers wettable flanks for improved optical inspection. Other dual N-channel MOSFETs in the 60V/16mΩ range may be considered if pin compatibility and thermal performance align with the design requirements.

FAQ

What is the maximum steady-state drain current at 25°C?

The maximum continuous drain current is 32 A when measured at a case temperature of 25°C.

Does this component support automotive applications?

Yes, the device is AEC-Q101 qualified and具备 PPAP capability, making it suitable for automotive electronics.

How does the wettable flank option differ from the standard version?

The NVMFWD016N06CT1G variant includes wettable flanks to enhance optical inspection quality during assembly, whereas the standard NVMFD016N06CT1G does not.