NVMFD5489NLT1G

Overview

The NVMFD5489NLT1G is a dual N-channel logic level power MOSFET manufactured by onsemi. It features a 60V drain-source voltage rating and a continuous drain current of 12A. The device offers a low on-resistance of 65mΩ at VGS=10V. It is housed in an 8-DFN (SO-8FL-Dual) surface-mount package, designed for efficient thermal performance and compact circuit layouts.

Feature Summary

• Dual N-channel configuration within a single package
• Logic level gate threshold for direct drive compatibility
• Low on-resistance for reduced conduction losses

Applications

• DC-DC converter output stages
• Motor control bridge circuits
• Power management load switches

Procurement Notes

Verify the specific datasheet revision to confirm electrical characteristics match design requirements. Ensure the SO-8FL-Dual package footprint aligns with PCB layout constraints. Check RoHS compliance status if required by project specifications. Confirm availability as distribution stocks may vary.

Selection Notes

Select this component for applications requiring dual N-channel isolation in a small form factor. The 60V rating suits low-voltage systems. Consider the 12A current capacity and 65mΩ resistance for efficiency needs. Evaluate thermal dissipation capabilities within the DFN package for the intended operating environment.

Part Context

This part belongs to onsemi's discrete semiconductor transistor portfolio, specifically the MOSFET array category. It utilizes silicon technology and is designed for surface-mount assembly. The product line focuses on providing high-performance switching solutions for modern electronic devices.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts maintain identical pinout, voltage ratings, and package dimensions to guarantee mechanical and electrical compatibility without redesign.