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The NVMFD5852NLWFT1G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a SO-8FL-Dual-8 surface-mount package and operates with a drain-source voltage of 40 V. The device supports a continuous drain current of 44 A at case temperature of 25°C, with a maximum power dissipation of 27 W. Key electrical parameters include a low on-resistance of 5.3 mΩ, a gate charge of 36 nC, and a threshold voltage of 2.4 V. Switching characteristics show a rise time of 5 ns and a fall time of 5 ns. The component is qualified under AEC-Q101 standards for automotive applications and functions within a junction temperature range of -55°C to +175°C.
Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest datasheet before procurement. Confirm that the component meets the required AEC-Q101 automotive grade specifications for the target application environment. Ensure compatibility with standard surface-mount assembly processes for the SO-8FL package type.
Select this component when a dual N-channel MOSFET with low on-resistance and high current capability is required in a small footprint. Consider the 40 V rating and 44 A current capacity relative to the system's voltage and load requirements. Evaluate thermal management needs based on the 27 W power dissipation rating and the specific PCB copper area available for heat sinking.
This part belongs to the NVMFD5 series of dual MOSFETs from onsemi, designed for space-constrained power applications. The series typically offers integrated solutions for half-bridge or synchronous rectifier configurations. The NVMFD5852NLWFT1G variant specifically targets 40 V systems requiring high efficiency and robust automotive-grade performance.
Direct replacements must match the 40 V, dual N-channel specification with similar Rds(on) and current ratings. Verify pinout compatibility with the SO-8FL-Dual-8 package. Check if alternative parts meet the same AEC-Q101 automotive qualification standards.