NVMFD5852NLWFT1G

NVMFD5852NLWFT1G

$2.37
  • Description:MOSFET 2N-CH 40V 15A 8DFN
  • Series:-

SKU:1823fd201a8e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 15A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:15A
  • Rds On (Max) @ Id, Vgs:6.9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 25V
  • Power - Max:3.2W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

NVMFD5852NLWFT1G

Overview

The NVMFD5852NLWFT1G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a SO-8FL-Dual-8 surface-mount package and operates with a drain-source voltage of 40 V. The device supports a continuous drain current of 44 A at case temperature of 25°C, with a maximum power dissipation of 27 W. Key electrical parameters include a low on-resistance of 5.3 mΩ, a gate charge of 36 nC, and a threshold voltage of 2.4 V. Switching characteristics show a rise time of 5 ns and a fall time of 5 ns. The component is qualified under AEC-Q101 standards for automotive applications and functions within a junction temperature range of -55°C to +175°C.

Feature Summary

  • Dual N-channel configuration in a compact SO-8FL-Dual-8 package
  • Low on-resistance for reduced conduction losses
  • AEC-Q101 qualification for automotive reliability
  • Fast switching performance with minimal rise and fall times

Applications

  • Automotive power distribution systems
  • High-side and low-side load switches
  • DC-DC converter output stages

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest datasheet before procurement. Confirm that the component meets the required AEC-Q101 automotive grade specifications for the target application environment. Ensure compatibility with standard surface-mount assembly processes for the SO-8FL package type.

Selection Notes

Select this component when a dual N-channel MOSFET with low on-resistance and high current capability is required in a small footprint. Consider the 40 V rating and 44 A current capacity relative to the system's voltage and load requirements. Evaluate thermal management needs based on the 27 W power dissipation rating and the specific PCB copper area available for heat sinking.

Part Context

This part belongs to the NVMFD5 series of dual MOSFETs from onsemi, designed for space-constrained power applications. The series typically offers integrated solutions for half-bridge or synchronous rectifier configurations. The NVMFD5852NLWFT1G variant specifically targets 40 V systems requiring high efficiency and robust automotive-grade performance.

Replacement Considerations

Direct replacements must match the 40 V, dual N-channel specification with similar Rds(on) and current ratings. Verify pinout compatibility with the SO-8FL-Dual-8 package. Check if alternative parts meet the same AEC-Q101 automotive qualification standards.

NVMFD5852NLWFT1GNVMFD5852NLWFT1G
$2.37
Buy Now