NVMFD5853NLT1G

Overview

The NVMFD5853NLT1G is a dual N-channel logic level power MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 40 V and a continuous drain current of 34 A. The device offers a typical on-resistance of 10 mΩ per channel, with a maximum gate-source voltage of 20 V. It operates within a temperature range of -55°C to +175°C and has a maximum power dissipation of 3 W. The component is housed in an 8-lead SO-8FL-Dual surface-mount package.

Feature Summary

• Dual N-channel configuration for space-efficient integration
• Logic level operation suitable for low-voltage drive applications
• High thermal stability supporting extended operating temperatures

Applications

• DC-DC converter output stages
• Motor control circuits
• Power management modules

Procurement Notes

Verify the specific ordering suffix and marking code against the official datasheet to ensure compatibility with design requirements. Confirm availability status as the manufacturer may schedule this part for obsolescence. Request updated documentation directly from onsemi to validate current manufacturing specifications before finalizing procurement plans.

Selection Notes

Select this component when a compact dual MOSFET solution is required for 40 V systems. The logic level threshold simplifies gate drive circuitry compared to standard threshold devices. Ensure the PCB layout supports the SO-8FL-Dual package dimensions and thermal dissipation needs for the intended current load.

Part Context

This device belongs to onsemi's family of dual power MOSFETs designed for high-density power applications. It complements other low-voltage discrete semiconductors by providing integrated dual-channel functionality in a small footprint, reducing board space and assembly complexity for modern electronic designs.

Replacement Considerations

Consult the official cross-reference list for verified substitutes. Direct replacements must match the 40 V rating, dual N-channel topology, and SO-8FL-Dual package constraints.