NVMFD5853NT1G

Overview

The NVMFD5853NT1G is a dual N-channel power MOSFET manufactured by onsemi. It features a 40V drain-source voltage rating and supports a continuous drain current of 53A. The device exhibits a low on-resistance of 10mΩ. Packaged in an SO-8FL-Dual-8 surface-mount configuration, it utilizes silicon technology. The component is designed for efficient switching applications with a gate-source voltage tolerance of 20V.

Feature Summary

• Dual N-channel configuration for space-efficient circuit design
• Low on-resistance for improved power efficiency
• Logic-level gate drive capability

Applications

• DC-DC converter circuits
• Motor control systems
• Power management modules

Procurement Notes

Verify the obsolete status indicated by distributors before procurement planning. Confirm package compatibility with PCB footprints. Check for alternative components if new design inclusion is required. Validate electrical parameters against specific application requirements to ensure reliability.

Selection Notes

Select this component for applications requiring dual N-channel isolation in a compact footprint. Consider the 40V rating and 53A current capacity for load matching. Evaluate thermal performance within the SO-8FL package constraints. Ensure gate drive signals align with logic-level operation specifications.

Part Context

This part belongs to onsemi's NVMFD series of dual MOSFETs. The series focuses on providing integrated solutions for power switching. The NVMFD5853NT1G specifically targets low-voltage, high-current applications. It complements single-channel options by offering paired devices in one package.

Replacement Considerations

NVMFD5853NWF1G