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The NVMFD5875NLT3G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a SO-8FL-Dual-8 surface-mount package and utilizes silicon technology. The device is qualified to AEC-Q101 standards for automotive reliability. Key electrical parameters include a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 22 A. The component supports both reel and cut tape packaging formats.
Verify the End-of-Life status before finalizing designs, as this component may be discontinued. Confirm availability through authorized distributors, noting that supply may be restricted. Ensure the specific ordering suffix matches the required packaging format, such as Reel or Cut Tape, to align with manufacturing processes.
Select this component for designs requiring a dual N-channel MOSFET with 60 V rating and 22 A current capacity in an SO-8FL package. Verify thermal management requirements against the package's dissipation capabilities. Ensure gate drive voltages are compatible with the enhancement mode characteristics and check for alternative sources due to potential discontinuation.
This part belongs to the NVMFD5875NL series from onsemi, designed for compact power switching solutions. It shares the Dual SO-8FL form factor with related devices like the NVMFD5877NL, offering integrated dual channels in a small outline footprint suitable for space-constrained automotive and industrial PCB layouts.
Check for direct pin-compatible substitutes within the NVMFD5875NL family. Evaluate similar dual N-channel MOSFETs with matching 60 V and 22 A ratings if this part is unavailable. Verify package dimensions and thermal characteristics to ensure mechanical compatibility.