NVMFD5877NLT1G

NVMFD5877NLT1G

  • Description:MOSFET 2N-CH 60V 6A 8DFN
  • Series:-

SKU:b2704ce54ac1 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 6A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:6A
  • Rds On (Max) @ Id, Vgs:39mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:540pF @ 25V
  • Power - Max:3.2W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMFD5877NLT1G

Overview

The onsemi NVMFD5877NLT1G is a dual N-channel power MOSFET housed in an 8-DFN (5x6 mm) SO8FL package. It features a 60V drain-source voltage rating and a continuous drain current of 17A at ambient temperature. The device achieves a maximum on-resistance of 39mΩ at Vgs=10V, minimizing conduction losses. Key electrical parameters include a gate charge of 5.9nC at 4.5V and an input capacitance of 540pF at 25V. It supports logic-level gating with a threshold voltage of 3V max at 250µA. The component operates within a junction temperature range of -55°C to 175°C and offers thermal dissipation capabilities of 3.2W at ambient and 23W at case temperatures.

Feature Summary

  • Dual N-channel configuration optimized for compact and efficient circuit designs
  • Low on-resistance reduces conduction losses for improved energy efficiency
  • Low capacitance characteristics minimize driving losses during switching
  • Available with wettable flanks to facilitate automated optical inspection

Applications

  • Solenoid drivers
  • Low-side driver circuits
  • High-side driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm packaging and reel specifications. Ensure the procurement channel provides valid traceability documentation required for automotive supply chains. Confirm RoHS compliance status and lead times directly with authorized distributors prior to placing orders.

Selection Notes

Select this component for applications requiring a 60V rating with high current handling in a small footprint. The low Rds(on) makes it suitable for battery-powered systems where efficiency is critical. Verify that the gate drive voltage aligns with the logic-level threshold for optimal performance. Consider thermal management requirements based on the specified Ta and Tc power dissipation limits.

Part Context

This part belongs to onsemi's NVMFD series of automotive-grade dual MOSFETs. These devices are designed for space-constrained environments requiring high reliability. The series typically includes variants with different current ratings and resistance values, all sharing the same compact DFN8 package and AEC-Q101 qualification standards for consistent integration across product lines.

Replacement Considerations

Check for direct substitutes such as the NTMFD5877NLT1G variant. Verify pinout compatibility and thermal pad dimensions when replacing components. Ensure any alternative part meets the same AEC-Q101 automotive qualification and PPAP requirements.

NVMFD5877NLT1GNVMFD5877NLT1G

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