NVMFD5877NLT3G

NVMFD5877NLT3G

$0.32
  • Description:MOSFET 2N-CH 60V 6A 8DFN
  • Series:-

SKU:44a64481ba68 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 6A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:6A
  • Rds On (Max) @ Id, Vgs:39mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:540pF @ 25V
  • Power - Max:3.2W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMFD5877NLT3G

Overview

The NVMFD5877NLT3G is a dual N-channel MOSFET from onsemi, housed in an SO-8FL (DFN8) surface-mount package. It features a drain-source voltage rating of 60V and a continuous drain current of 17A at ambient temperature. The device achieves a low on-resistance of 39mΩ at VGS=10V, minimizing conduction losses. Key electrical parameters include a maximum gate charge of 5.9nC at 4.5V and input capacitance of 540pF at 25V. Thermal performance specifies a power dissipation of 3.2W at Ta and 23W at Tc. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • Dual N-channel configuration with optimized low on-resistance for reduced conduction loss.
  • Low gate charge and capacitance characteristics designed to minimize switching and drive losses.
  • SO-8FL package variant includes wettable flanks to facilitate automated optical inspection.
  • Automotive-grade reliability certified under AEC-Q101 standards.

Applications

  • Solenoid drivers
  • Low-side driver circuits
  • High-side driver circuits

Procurement Notes

Verify the specific suffix against official documentation, as ordering codes define packaging and tape specifications rather than altering the semiconductor function. Confirm availability status through authorized distributors, noting that supply chain constraints may affect immediate procurement. Ensure compliance with RoHS and halogen-free requirements if mandated by the end application.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution with automotive qualification. The 60V rating and 17A current capacity suit low-voltage switching applications. Evaluate thermal management needs based on the specified power dissipation limits. Consider the SO-8FL footprint compatibility during PCB layout to ensure proper heat sinking and mechanical stability.

Part Context

This part belongs to the NVMFD5877NL family of dual MOSFETs. Variants such as NTMFD5877NLT1G share identical electrical characteristics but differ in reel packaging quantities. The NVMFD5877NLWF variant specifically denotes the inclusion of wettable flanks for enhanced inspection capabilities compared to standard versions.

Replacement Considerations

NTMFD5877NLT1G serves as a functional equivalent with matching electrical specifications. Verify package dimensions and pinout alignment before substitution. Ensure the alternative part meets the same AEC-Q101 automotive qualification requirements for critical applications.

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$0.32
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