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The NVMFD5877NLT3G is a dual N-channel MOSFET from onsemi, housed in an SO-8FL (DFN8) surface-mount package. It features a drain-source voltage rating of 60V and a continuous drain current of 17A at ambient temperature. The device achieves a low on-resistance of 39mΩ at VGS=10V, minimizing conduction losses. Key electrical parameters include a maximum gate charge of 5.9nC at 4.5V and input capacitance of 540pF at 25V. Thermal performance specifies a power dissipation of 3.2W at Ta and 23W at Tc. The component operates within a junction temperature range of -55°C to +175°C.
Verify the specific suffix against official documentation, as ordering codes define packaging and tape specifications rather than altering the semiconductor function. Confirm availability status through authorized distributors, noting that supply chain constraints may affect immediate procurement. Ensure compliance with RoHS and halogen-free requirements if mandated by the end application.
Select this component for designs requiring a compact dual N-channel solution with automotive qualification. The 60V rating and 17A current capacity suit low-voltage switching applications. Evaluate thermal management needs based on the specified power dissipation limits. Consider the SO-8FL footprint compatibility during PCB layout to ensure proper heat sinking and mechanical stability.
This part belongs to the NVMFD5877NL family of dual MOSFETs. Variants such as NTMFD5877NLT1G share identical electrical characteristics but differ in reel packaging quantities. The NVMFD5877NLWF variant specifically denotes the inclusion of wettable flanks for enhanced inspection capabilities compared to standard versions.
NTMFD5877NLT1G serves as a functional equivalent with matching electrical specifications. Verify package dimensions and pinout alignment before substitution. Ensure the alternative part meets the same AEC-Q101 automotive qualification requirements for critical applications.