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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 6A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：39mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：540pF @ 25V
- Power - Max：3.2W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The onsemi NVMFD5877NLWFT1G is a dual N-channel MOSFET designed for compact and efficient power management applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 17A at ambient temperature. The device achieves a low on-resistance (Rds(on)) of 39mΩ at Vgs=10V, minimizing conduction losses. Packaged in an SO-8FL-Dual-8 format with wettable flanks, it supports enhanced optical inspection. The component operates within a junction temperature range of -55°C to +175°C and is AEC-Q101 qualified for automotive reliability.
Feature Summary
- Low on-resistance reduces conduction losses for improved energy efficiency
- Low gate charge and capacitance minimize switching and drive losses
- Wettable flank package design facilitates automated optical inspection
- Automotive-grade qualification ensures high reliability in harsh environments
Applications
- Solenoid drivers
- Low-side switches
- High-side switches
Procurement Notes
Verify the specific suffix 'WFT1G' confirms the reel packaging quantity and tape specifications against the official datasheet. Ensure the wettable flank variant is required for your assembly line's AOI capabilities. Confirm RoHS compliance status and PPAP documentation availability if deploying in regulated automotive supply chains. Cross-reference the exact part number to distinguish from non-flank versions.
Selection Notes
Select this component when a dual N-channel configuration is required in a small footprint. The 60V rating suits low-voltage DC systems. The 39mΩ Rds(on) balances cost and performance for moderate current loads up to 17A. Consider the thermal dissipation limits (3.2W Ta / 23W Tc) during PCB layout. Verify that the SO-8FL package fits the board space constraints compared to standard SO-8.
Part Context
This part belongs to onsemi's PowerTrench family of N-channel MOSFETs. It shares the SO-8FL dual channel architecture with other devices in the series but offers specific electrical characteristics tailored for general-purpose switching. The inclusion of wettable flanks distinguishes it from standard surface-mount variants, targeting higher quality control standards in manufacturing.
Replacement Considerations
Direct pin-compatible substitutes may include other onsemi dual N-channel MOSFETs in SO-8FL packages, such as the NVMFD5C680NLWFT1G, provided the electrical parameters meet the circuit requirements. Verify Rds(on), Id, and Vgs thresholds before substitution.
