NVMFD5C446NLT1G

Overview

The onsemi NVMFD5C446NLT1G is a dual N-channel enhancement mode power MOSFET designed for surface-mount applications. It features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 25A at 25°C ambient temperature, or 145A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2.65mΩ at Vgs=10V and Id=20A. Key electrical parameters include a maximum gate charge (Qg) of 25nC at Vgs=4.5V and a maximum input capacitance (Ciss) of 3170pF at Vds=25V. It operates within a junction temperature range of -55°C to 175°C and is housed in an 8-DFN (5x6mm) package.

Feature Summary

• Dual N-channel configuration providing two independent switching channels in a compact footprint.
• Automotive-grade reliability certified under AEC-Q101 standards with PPAP capability.
• Low conduction losses achieved through minimized on-resistance values.
• Reduced switching and drive losses facilitated by low gate charge and capacitance characteristics.

Applications

• Automotive electronic systems requiring high reliability and compact form factors.
• High-efficiency DC-DC converter designs for power management.
• Motor control circuits utilizing low-voltage switching architectures.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm packaging type and tape-and-reel specifications. Ensure that the component meets the required AEC-Q101 qualification levels for the intended automotive application. Cross-reference the part number with authorized distributors to confirm current availability and lead times prior to finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel MOSFET with 40V rating and high current capacity is required in a small surface-mount package. Consider the thermal performance limits defined by the 8-DFN package and the specific Rds(on) requirements at the operating gate voltage. Evaluate the gate charge specifications against the driver capabilities to ensure efficient switching performance in the target circuit design.

Part Context

This part belongs to the NVMFD5C446N series of dual N-channel power MOSFETs from onsemi. The series is characterized by its optimized balance between low on-resistance and fast switching speeds, tailored for space-constrained power electronics. The NLT1G suffix indicates the specific tape-and-reel packaging configuration used for automated assembly processes.

Replacement Considerations

Direct substitutes must match the 40V Vdss, dual N-channel topology, and 8-DFN package dimensions. Verify that alternative components meet or exceed the 25A/145A current ratings and 2.65mΩ Rds(on) specifications. Ensure any replacement also holds AEC-Q101 certification if used in automotive contexts.