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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 24A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 127A (Tc)
- Rds On (Max) @ Id, Vgs：2.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2450pF @ 25V
- Power - Max：3.2W (Ta), 89W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMFD5C446NT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a 40V drain-source voltage rating and operates in an automotive-grade environment with AEC-Q101 certification. The device utilizes an 8-DFN (5x6mm) surface-mount package, providing a compact form factor for space-constrained designs. Key electrical parameters include a maximum continuous drain current of 25A at 25°C ambient temperature and 145A at case temperature. The typical on-resistance is 2.65mΩ at 10V gate drive, with a maximum gate charge of 25nC at 4.5V. It supports a junction temperature range from -55°C to 175°C.
Feature Summary
- Dual N-channel configuration within a compact 8-DFN surface-mount package
- Automotive-grade reliability certified under AEC-Q101 standards
- Low on-resistance characteristics to minimize conduction losses
- Optimized gate charge for efficient switching performance
Applications
- Automotive power distribution systems
- Compact DC-DC converter modules
- Motor control circuits requiring dual channel isolation
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required environmental and quality certifications for the intended application before finalizing procurement decisions.
Selection Notes
Select this component when a dual N-channel topology is required in a small footprint. Ensure the design accounts for the thermal resistance limits and verify that the gate drive voltage aligns with the specified Rds(on) test conditions for optimal efficiency.
Part Context
This part belongs to the NVMFD5C4xxN series of dual MOSFETs designed for high-density power applications. It shares the same 8-DFN package outline as other variants in the family but differs in specific electrical ratings such as current handling and on-resistance values.
Replacement Considerations
Direct substitutes must match the 8-DFN pinout and 40V rating. Verify equivalent Rds(on) and Qg values to maintain circuit performance. Check for identical AEC-Q101 qualification if used in automotive contexts.
