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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 18A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 84A (Tc)
- Rds On (Max) @ Id, Vgs：4.7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1300pF @ 25V
- Power - Max：3W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMFD5C462NLT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a SO-8FL-Dual-8 (DFN-8) surface-mount package with dimensions of 5x6 mm. The device supports a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 70 A at 25°C case temperature. The typical drain-source on-resistance (Rds(on)) is 5.4 mΩ. It operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 50 W. The gate-source voltage rating is ±20 V, and the total gate charge (Qg) is typically 16 nC.
Feature Summary
- Dual N-channel configuration in a compact 5x6 mm DFN-8 package for space-constrained designs.
- Low on-resistance of 5.4 mΩ minimizes conduction losses and improves thermal performance.
- AEC-Q101 qualified for automotive reliability standards.
- Enhanced wettable flanks available in specific suffix variants to facilitate optical inspection.
Applications
- Automotive electronics requiring AEC-Q101 compliance.
- Compact DC-DC converter modules.
- High-efficiency power switching circuits.
Procurement Notes
Verify the complete ordering part number against the manufacturer's official datasheet to ensure correct package and tape-and-reel specifications. Confirm that the selected variant meets the specific thermal and electrical requirements of the target application circuit before finalizing procurement.
Selection Notes
Select this component when a dual N-channel MOSFET with low Rds(on) and high current capability is required in a small footprint. Ensure the driving circuit can handle the gate charge characteristics and that the PCB layout supports the thermal dissipation needs of the SO-8FL package.
Part Context
This part belongs to the NVMFD5C462N series of dual N-channel MOSFETs from onsemi. The series is designed for applications demanding high efficiency and compact size, leveraging advanced silicon technology to achieve low on-resistance within a standard DFN-8 form factor suitable for automated surface mounting.
Replacement Considerations
Direct replacements must match the 40V Vds, ~5.4mΩ Rds(on), and SO-8FL-Dual-8 package. Verify pinout compatibility and thermal resistance values. Check for equivalent AEC-Q101 qualification if used in automotive contexts.
