NVMFD5C462NLWFT1G

Overview

The NVMFD5C462NLWFT1G is a dual N-channel enhancement-mode MOSFET from onsemi, housed in an 8-lead DFN surface-mount package. It features a drain-source voltage rating of 40 V and a maximum continuous drain current of 70 A at 25°C ambient temperature. The device exhibits a low on-resistance of 5.4 mΩ and a typical gate charge of 16 nC. Operating within a junction temperature range of -55°C to +175°C, it supports power dissipation up to 50 W at case temperature. This component is designed for high-efficiency power conversion applications requiring compact form factors.

Feature Summary

• Dual N-channel configuration integrated into a single compact DFN-8 package
• Low on-resistance and gate charge characteristics for reduced conduction and switching losses
• AEC-Q101 qualified with PPAP capability for automotive reliability standards
• Available with wettable flanks to facilitate automated optical inspection

Applications

• Automotive electronics systems requiring AEC-Q101 compliance
• Compact power supply modules and DC-DC converters
• Portable devices with strict space constraints
• High-efficiency motor control circuits

Procurement Notes

Verify the specific suffix against official datasheets to confirm functional equivalence, as packaging variations like wettable flanks may exist. Confirm RoHS compliance and lead-free status prior to integration. Ensure thermal management design accounts for the specified power dissipation limits at operating temperatures. Validate that the 40V rating meets circuit requirements under all transient conditions.

Selection Notes

Select this component when a dual N-channel topology is required in a minimal footprint. The 40V rating suits low-voltage automotive and industrial applications. Evaluate thermal resistance values relative to the PCB copper area, as performance depends on the mounting environment. Compare gate charge specifications against driver capabilities to ensure optimal switching speeds without excessive drive current demands.

Part Context

This part belongs to the NVMFD5C series, which focuses on high-density power solutions. The family utilizes advanced silicon technology to achieve low Rds(on) within small packages. The NVMFD5C462NL variant specifically targets applications needing balanced performance between current handling and switching efficiency in constrained spaces.

Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs with similar 40V ratings and comparable pinouts. Verify that any replacement maintains the same Rds(on) and Qg specifications to preserve circuit efficiency. Check for mechanical compatibility with the 8-DFN (5x6mm) footprint.