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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 17.6A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：17.6A (Ta), 70A (Tc)
- Rds On (Max) @ Id, Vgs：5.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1020pF @ 25V
- Power - Max：3.2W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The onsemi NVMFD5C462NT1G is a dual N-channel enhancement mode power MOSFET housed in an 8-DFN (5x6 mm) package. It features a 40 V drain-source breakdown voltage and a maximum continuous drain current of 70 A at case temperature. The device exhibits a low on-resistance of 5.4 mΩ at 10 V gate drive, with a total gate charge of 16 nC. It supports a junction temperature range from -55°C to +175°C and holds AEC-Q101 automotive qualification.
Feature Summary
- Dual N-channel configuration within a compact surface-mount footprint
- Low conduction losses via minimized on-resistance
- Automotive-grade reliability with AEC-Q101 certification
- High thermal performance capability for power dissipation
Applications
- Automotive power distribution systems
- DC-DC converter output stages
- Motor control applications requiring dual channel isolation
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and REACH requirements for the target market. Confirm that the AEC-Q101 qualification status meets the specific project reliability standards before finalizing procurement.
Selection Notes
Select this component when a dual N-channel topology is required in a space-constrained design. The 40V rating suits low-voltage automotive and industrial bus architectures. Evaluate the 5.4 mΩ on-resistance against thermal management constraints to ensure the junction temperature remains within the specified operational limits during peak load conditions.
Part Context
This part belongs to the NVMFD5C462N series of dual MOSFETs from onsemi. It shares the same core electrical characteristics as variants like NVMFD5C462NL and NVMFD5C462NW, differing primarily in packaging options such as standard DFN or wettable flange configurations for optical inspection.
Replacement Considerations
Direct substitutes include NVMFD5C462NL and NVMFD5C462NW. Verify pinout compatibility and thermal resistance values when replacing with other dual MOSFETs from different manufacturers.
