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Product Detailed Parameters
- Description：MOSFET 40V S08FL DUAL
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMFD5C462NWFT1G is a dual N-channel power MOSFET manufactured by onsemi, housed in an SO-8FL (DFN-8) surface-mount package measuring 5x6 mm. It features a drain-source breakdown voltage of 40 V and a maximum continuous drain current of 70 A at case temperature of 25°C. The device exhibits a typical on-resistance of 5.4 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge of 16 nC and a total gate charge of 1020 nC. It operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.
Feature Summary
- Dual N-channel configuration integrated into a compact 5x6 mm DFN-8 footprint for space-constrained designs.
- Low on-resistance characteristic minimizes conduction losses and improves overall system efficiency.
- Optimized gate charge and capacitance values reduce switching energy and drive requirements.
- Automotive-grade reliability with AEC-Q101 certification and PPAP capability for high-reliability applications.
Applications
- Automotive power distribution systems requiring robust switching capabilities.
- Compact DC-DC converter modules where thermal management and size are critical.
- High-efficiency motor control circuits utilizing low-voltage N-channel topology.
Procurement Notes
Verify the specific suffix 'WF' indicates the wettable flanks option if optical inspection is required for your assembly process. Confirm that the ordering part number matches the exact tape and reel quantity specified by the manufacturer. Ensure compatibility with RoHS and REACH regulations for your target market. Cross-reference the datasheet revision date to confirm parameter consistency before finalizing component selection.
Selection Notes
Select this component when a dual N-channel MOSFET is needed in a small outline package with 40V rating. The 5.4 mΩ on-resistance makes it suitable for moderate to high-current applications up to 70A under adequate cooling. Consider the thermal resistance values provided in the datasheet for PCB layout planning. Verify that the gate drive voltage supports the specified threshold and on-state characteristics for optimal performance.
Part Context
This device belongs to the NVMFD5C462N family from onsemi, designed specifically for automotive and industrial applications demanding high power density. The series emphasizes low loss and small form factor, addressing the trend toward miniaturization in modern electronic systems. It shares architectural similarities with other members of the NVMFD5CxxN lineup but offers distinct electrical trade-offs regarding resistance and current handling.
Replacement Considerations
Direct replacements must match the 40V, dual N-channel specification and SO-8FL/DFN-8 package. Check equivalent parts from other manufacturers for compatible Rds(on), Qg, and thermal characteristics. Ensure any substitute also meets AEC-Q101 standards if used in automotive contexts. Verify pinout compatibility to avoid PCB redesign.
